Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

A. P. Zhang, X. A. Cao, G. Dang, F. Ren, J. Han, J. I. Chyi, C. M. Lee, C. C. Chuo, T. E. Nee

Research output: Contribution to journalArticlepeer-review

Abstract

GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GAN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN with both p+ guard rings and metal overlap edge terminations; 4.3 kV for Al0.25Ga0.75N without edge termination) displayed a negative temperature coefficient of-6.0 ± 0.4 V.K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100A·cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON were 0.13 Ωcm2 for GaN and 2.3 Ωcm2 for AlGaN, producing figures-or-merit (VRB)2/RON of 73.9 and 8.2 MW.cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

Original languageEnglish
Pages (from-to)T271-T276
JournalMaterials Research Society Symposium - Proceedings
Volume622
DOIs
StatePublished - 2000

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