Abstract
A taper line distributed photodetector (TLDP) was proposed. Low temperature grown GaAs based self-align metal-semiconductor-metal traveling wave photodetector structure was adopted as the active photo-absorption region in each taper section for its high speed and high efficiency characteristics. The velocity match between optical wave and microwave in velocity match distributed photodetector (VMPD) was replaced by phase match in each taper section of the structure. High impedance line in first taper section was achieved without radiation loss.
| Original language | English |
|---|---|
| Pages (from-to) | 382-383 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| State | Published - 2001 |
| Event | 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States Duration: 11 Nov 2001 → 15 Nov 2001 |