Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1-xSbx type-II quantum dots

Wei Ting Hsu; Yu An Liao; Shu Kai Lu; Shun Jen Cheng; Pei Chin Chiu; Jen Inn Chyi; Wen Hao Chang

doi:10.1016/j.physe.2009.12.033

Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs_1-xSb_x type-II quantum dots

Wei Ting Hsu, Yu An Liao, Shu Kai Lu, Shun Jen Cheng, Pei Chin Chiu, Jen Inn Chyi, Wen Hao Chang

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs_1-xSb_x layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs _1-xSb_x layer. We find that the type-II QD structure can sustain thermal annealing up to 850 °C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs_1-xSb _x type-II QDs.

Original language	English
Pages (from-to)	2524-2528
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/j.physe.2009.12.033
State	Published - Sep 2010

Keywords

Quantum dots
Time-resolved photoluminescence
Type-II

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10.1016/j.physe.2009.12.033

Cite this

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title = "Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1-xSbx type-II quantum dots",

abstract = "Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-xSbx layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs 1-xSbx layer. We find that the type-II QD structure can sustain thermal annealing up to 850 °C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs1-xSb x type-II QDs.",

keywords = "Quantum dots, Time-resolved photoluminescence, Type-II",

author = "Hsu, {Wei Ting} and Liao, {Yu An} and Lu, {Shu Kai} and Cheng, {Shun Jen} and Chiu, {Pei Chin} and Chyi, {Jen Inn} and Chang, {Wen Hao}",

note = "Funding Information: This work was supported in part by the project of MOE-ATU and the National Science Council of Taiwan under Grant No. NSC 97-2112-M-009-015-MY2 .",

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T1 - Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1-xSbx type-II quantum dots

AU - Hsu, Wei Ting

AU - Liao, Yu An

AU - Lu, Shu Kai

AU - Cheng, Shun Jen

AU - Chiu, Pei Chin

AU - Chyi, Jen Inn

AU - Chang, Wen Hao

N1 - Funding Information: This work was supported in part by the project of MOE-ATU and the National Science Council of Taiwan under Grant No. NSC 97-2112-M-009-015-MY2 .

PY - 2010/9

Y1 - 2010/9

N2 - Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-xSbx layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs 1-xSbx layer. We find that the type-II QD structure can sustain thermal annealing up to 850 °C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs1-xSb x type-II QDs.

AB - Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-xSbx layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs 1-xSbx layer. We find that the type-II QD structure can sustain thermal annealing up to 850 °C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs1-xSb x type-II QDs.

KW - Quantum dots

KW - Time-resolved photoluminescence

KW - Type-II

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U2 - 10.1016/j.physe.2009.12.033

DO - 10.1016/j.physe.2009.12.033

M3 - 期刊論文

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EP - 2528

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

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