Synthesis of ultrathin composition graded doped Lateral WSe2/WS2 heterostructures

Zhipeng Li, Jialu Zheng, Yupeng Zhang, Changxi Zheng, Wei Yen Woon, Min Chiang Chuang, Hung Chieh Tsai, Chia Hao Chen, Asher Davis, Zai Quan Xu, Jiao Lin, Han Zhang, Qiaoliang Bao

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.

Original languageEnglish
Pages (from-to)34204-34212
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number39
StatePublished - 4 Oct 2017


  • Chemical vapor deposition
  • Heterostructure
  • Optoelectronic devices
  • Substitution
  • Transition-metal dichalcogenides
  • Two-dimensional material


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