Synthesis of size- and site-controlled SiGe nanorods on epitaxial Si 0.8Ge0.2 virtual substrates

Shao Liang Cheng; Cheng Hsuan Chung; Sheng Wei Lee

doi:10.1109/INEC.2010.5424989

Synthesis of size- and site-controlled SiGe nanorods on epitaxial Si _0.8Ge_0.2 virtual substrates

Shao Liang Cheng, Cheng Hsuan Chung, Sheng Wei Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Two-dimensional (2D) periodic arrays of vertically-aligned SiGe nanorods were successfully produced on (001)Si_0.8Ge_0.2 virtual substrates by using the polystyrene (PS) nanosphere lithography technique and selective metal-catalytic etching method. The diameter and site of the produced SiGe nanorods were controlled by the RIE-trimmed PS spheres mask used. TEM and electron diffraction analyses results clearly reveal that all the produced SiGe nanorods were perfectly single crystals and their axial orientations were along the [001] direction. TEM/EDS analysis further confirmed that the nanorods produced were pure SiGe nanorods.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1142-1143
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424989
State	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 3 Jan 2010 → 8 Jan 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	3/01/10 → 8/01/10

Access to Document

10.1109/INEC.2010.5424989

Cite this

Cheng, S. L., Chung, C. H., & Lee, S. W. (2010). Synthesis of size- and site-controlled SiGe nanorods on epitaxial Si _0.8Ge_0.2 virtual substrates. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1142-1143). [5424989] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424989

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title = "Synthesis of size- and site-controlled SiGe nanorods on epitaxial Si 0.8Ge0.2 virtual substrates",

abstract = "Two-dimensional (2D) periodic arrays of vertically-aligned SiGe nanorods were successfully produced on (001)Si0.8Ge0.2 virtual substrates by using the polystyrene (PS) nanosphere lithography technique and selective metal-catalytic etching method. The diameter and site of the produced SiGe nanorods were controlled by the RIE-trimmed PS spheres mask used. TEM and electron diffraction analyses results clearly reveal that all the produced SiGe nanorods were perfectly single crystals and their axial orientations were along the [001] direction. TEM/EDS analysis further confirmed that the nanorods produced were pure SiGe nanorods.",

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Cheng, SL, Chung, CH & Lee, SW 2010, Synthesis of size- and site-controlled SiGe nanorods on epitaxial Si _0.8Ge_0.2 virtual substrates. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424989, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1142-1143, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424989

Synthesis of size- and site-controlled SiGe nanorods on epitaxial Si _0.8Ge_0.2 virtual substrates. / Cheng, Shao Liang; Chung, Cheng Hsuan; Lee, Sheng Wei.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1142-1143 5424989 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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