Synthesis and characterization of metallic TaSi2 nanowires

Y. L. Chueh, L. J. Chou, S. L. Cheng, L. J. Chen, C. J. Tsai, C. M. Hsu, S. C. Kung

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.

Original languageEnglish
Article number223113
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number22
DOIs
StatePublished - 2005

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