Synthesis and characterization of metallic TaSi2 nanowires

Y. L. Chueh; L. J. Chou; S. L. Cheng; L. J. Chen; C. J. Tsai; C. M. Hsu; S. C. Kung

doi:10.1063/1.2132523

Synthesis and characterization of metallic TaSi₂ nanowires

Y. L. Chueh, L. J. Chou, S. L. Cheng, L. J. Chen, C. J. Tsai, C. M. Hsu, S. C. Kung

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.

Original language	English
Article number	223113
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	22
DOIs	https://doi.org/10.1063/1.2132523
State	Published - 2005

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10.1063/1.2132523

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title = "Synthesis and characterization of metallic TaSi2 nanowires",

abstract = "TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.",

author = "Chueh, {Y. L.} and Chou, {L. J.} and Cheng, {S. L.} and Chen, {L. J.} and Tsai, {C. J.} and Hsu, {C. M.} and Kung, {S. C.}",

note = "Funding Information: This research was supported by the National Science Council through Grant No. NSC 93-2215-E-007-012 and the Ministry of Education through Grant No. 92-E-FA04-1-4.",

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T1 - Synthesis and characterization of metallic TaSi2 nanowires

AU - Chueh, Y. L.

AU - Chou, L. J.

AU - Cheng, S. L.

AU - Chen, L. J.

AU - Tsai, C. J.

AU - Hsu, C. M.

AU - Kung, S. C.

N1 - Funding Information: This research was supported by the National Science Council through Grant No. NSC 93-2215-E-007-012 and the Ministry of Education through Grant No. 92-E-FA04-1-4.

PY - 2005

Y1 - 2005

N2 - TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.

AB - TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.

UR - http://www.scopus.com/inward/record.url?scp=27944502478&partnerID=8YFLogxK

U2 - 10.1063/1.2132523

DO - 10.1063/1.2132523

M3 - 期刊論文

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SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223113

ER -

Synthesis and characterization of metallic TaSi2 nanowires

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Synthesis and characterization of metallic TaSi₂ nanowires