Surface oxygen implantation for GaAs MESFETs passivation

Kuang Po Hsueh, Hung Tsao Hsu, Chao His Wu, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Ion-implanted GaAs MESFETs with and without extra oxygen implantation have been fabricated, studied and compared. The extra oxygen implantation was employed after the channel implantation to form a high-resistance layer near the surface of GaAs MESFETs and to replace the passivation process. Two different oxygen implantation and annealing conditions were used to study the effect of implanted oxygen on device performance. The device with oxygen implantation and annealing at the same time as channel implantation demonstrated improved transconductance and breakdown characteristics, less frequency dispersion of drain current and good time dependence of drain current at 150°C in air without sacrificing rf performance.

Original languageEnglish
Pages (from-to)L118-L120
JournalSemiconductor Science and Technology
Volume19
Issue number12
DOIs
StatePublished - Dec 2004

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