Surface oxygen implantation for GaAs MESFETs passivation

Kuang Po Hsueh; Hung Tsao Hsu; Chao His Wu; Yue Ming Hsin

doi:10.1088/0268-1242/19/12/L03

Surface oxygen implantation for GaAs MESFETs passivation

Kuang Po Hsueh, Hung Tsao Hsu, Chao His Wu, Yue Ming Hsin

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Ion-implanted GaAs MESFETs with and without extra oxygen implantation have been fabricated, studied and compared. The extra oxygen implantation was employed after the channel implantation to form a high-resistance layer near the surface of GaAs MESFETs and to replace the passivation process. Two different oxygen implantation and annealing conditions were used to study the effect of implanted oxygen on device performance. The device with oxygen implantation and annealing at the same time as channel implantation demonstrated improved transconductance and breakdown characteristics, less frequency dispersion of drain current and good time dependence of drain current at 150°C in air without sacrificing rf performance.

Original language	English
Pages (from-to)	L118-L120
Journal	Semiconductor Science and Technology
Volume	19
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/19/12/L03
State	Published - Dec 2004

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title = "Surface oxygen implantation for GaAs MESFETs passivation",

abstract = "Ion-implanted GaAs MESFETs with and without extra oxygen implantation have been fabricated, studied and compared. The extra oxygen implantation was employed after the channel implantation to form a high-resistance layer near the surface of GaAs MESFETs and to replace the passivation process. Two different oxygen implantation and annealing conditions were used to study the effect of implanted oxygen on device performance. The device with oxygen implantation and annealing at the same time as channel implantation demonstrated improved transconductance and breakdown characteristics, less frequency dispersion of drain current and good time dependence of drain current at 150°C in air without sacrificing rf performance.",

author = "Hsueh, {Kuang Po} and Hsu, {Hung Tsao} and Wu, {Chao His} and Hsin, {Yue Ming}",

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T1 - Surface oxygen implantation for GaAs MESFETs passivation

AU - Hsueh, Kuang Po

AU - Hsu, Hung Tsao

AU - Wu, Chao His

AU - Hsin, Yue Ming

PY - 2004/12

Y1 - 2004/12

N2 - Ion-implanted GaAs MESFETs with and without extra oxygen implantation have been fabricated, studied and compared. The extra oxygen implantation was employed after the channel implantation to form a high-resistance layer near the surface of GaAs MESFETs and to replace the passivation process. Two different oxygen implantation and annealing conditions were used to study the effect of implanted oxygen on device performance. The device with oxygen implantation and annealing at the same time as channel implantation demonstrated improved transconductance and breakdown characteristics, less frequency dispersion of drain current and good time dependence of drain current at 150°C in air without sacrificing rf performance.

AB - Ion-implanted GaAs MESFETs with and without extra oxygen implantation have been fabricated, studied and compared. The extra oxygen implantation was employed after the channel implantation to form a high-resistance layer near the surface of GaAs MESFETs and to replace the passivation process. Two different oxygen implantation and annealing conditions were used to study the effect of implanted oxygen on device performance. The device with oxygen implantation and annealing at the same time as channel implantation demonstrated improved transconductance and breakdown characteristics, less frequency dispersion of drain current and good time dependence of drain current at 150°C in air without sacrificing rf performance.

UR - http://www.scopus.com/inward/record.url?scp=10444281682&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/19/12/L03

DO - 10.1088/0268-1242/19/12/L03

M3 - 期刊論文

AN - SCOPUS:10444281682

VL - 19

SP - L118-L120

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 12

ER -

Surface oxygen implantation for GaAs MESFETs passivation

Abstract

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