Surface orientation effects on SiGe quantum dots and nanorings formation

C. H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Surface orientation effects on SiGe quantum dots and nanorings have been investigated in this work. The base shapes of SiGe QDs and nanorings can be controlled by different surface orientation. Moreover, the hydrogen desorption rate is different in three kinds of surface orientation. The surface diffusion, which plays an important role in Ge out-diffusion mechanism, is dominated by the hydrogen desorption rate, and thus the formation rate of SiGe nanorings becomes different.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages649-659
Number of pages11
Edition6
ISBN (Electronic)9781607681755
ISBN (Print)9781566778251
DOIs
StatePublished - 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

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