Surface band structure of Al(1 0 0) studied with high-resolution angle-resolved photoelectron spectroscopy

Xihui Liang, Cheng Maw Cheng, Ku Ding Tsuei, Dah An Luh

Research output: Contribution to journalArticlepeer-review

Abstract

From an examination of the Al(1 0 0) surface band structure with high-resolution angle-resolved photoelectron spectra, we identified three surface states. Features in the surface band structure predicted theoretically were confirmed experimentally, including the dispersion of the surface state within the narrow band gap centered at X̄, an avoided crossing between two surface states along Γ̄X̄, and the dispersion of the surface state within the symmetry gap along Γ̄M̄. The electron-phonon coupling strength of the surface state at Γ̄ was determined. Our results indicate that there is no thermally induced defect on Al(1 0 0) from 90 to 420 K. Our photoemission data serve as reference for future investigation and motivate re-examination of many systems with contemporary photoemission instruments.

Original languageEnglish
Pages (from-to)551-555
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume184
Issue number11-12
DOIs
StatePublished - Jan 2012

Keywords

  • Al(1 0 0)
  • ARPES
  • Electron-phonon coupling
  • Surface state

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