Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells

L. H. Peng; C. W. Shih; C. M. Lai; C. C. Chuo; J. I. Chyi

doi:10.1063/1.1583869

Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells

L. H. Peng, C. W. Shih, C. M. Lai, C. C. Chuo, J. I. Chyi

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Abstract

The surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells (MQW) were discussed. It was shown that the emission from the thin GaN cap layer quenches, but that from the InGaN wells prevails, when excited by a shorter wavelength at 248 nm. The emission from the InGaN/GaN MQWs was shown dominant by the recombination between the high-lying subbands and the screening of internal field effects by solving the rate and Poisson equations with a Fermi-level pinning in the band-structure analysis.

Original language	English
Pages (from-to)	4268-4270
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	24
DOIs	https://doi.org/10.1063/1.1583869
State	Published - 16 Jun 2003

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abstract = "The surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells (MQW) were discussed. It was shown that the emission from the thin GaN cap layer quenches, but that from the InGaN wells prevails, when excited by a shorter wavelength at 248 nm. The emission from the InGaN/GaN MQWs was shown dominant by the recombination between the high-lying subbands and the screening of internal field effects by solving the rate and Poisson equations with a Fermi-level pinning in the band-structure analysis.",

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AU - Peng, L. H.

AU - Shih, C. W.

AU - Lai, C. M.

AU - Chuo, C. C.

AU - Chyi, J. I.

PY - 2003/6/16

Y1 - 2003/6/16

N2 - The surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells (MQW) were discussed. It was shown that the emission from the thin GaN cap layer quenches, but that from the InGaN wells prevails, when excited by a shorter wavelength at 248 nm. The emission from the InGaN/GaN MQWs was shown dominant by the recombination between the high-lying subbands and the screening of internal field effects by solving the rate and Poisson equations with a Fermi-level pinning in the band-structure analysis.

AB - The surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells (MQW) were discussed. It was shown that the emission from the thin GaN cap layer quenches, but that from the InGaN wells prevails, when excited by a shorter wavelength at 248 nm. The emission from the InGaN/GaN MQWs was shown dominant by the recombination between the high-lying subbands and the screening of internal field effects by solving the rate and Poisson equations with a Fermi-level pinning in the band-structure analysis.

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U2 - 10.1063/1.1583869

DO - 10.1063/1.1583869

M3 - 期刊論文

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VL - 82

SP - 4268

EP - 4270

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells

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