Surface band bending effects in the optical gain of InGaN/GaN multiple quantum wells

L. H. Peng; C. W. Shih; C. M. Lai; C. C. Chuo; J. I. Chyi

Surface band bending effects in the optical gain of InGaN/GaN multiple quantum wells

L. H. Peng, C. W. Shih, C. M. Lai, C. C. Chuo, J. I. Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We resolve the surface band-bending effects in the optical gain GaN/InGaN MQWs. The spectral blue shift is ascribed to the carrier transportation from the GaN cap-layer and mitigation of internal field in the InGaN well.

Original language	English
Pages (from-to)	359-360
Number of pages	2
Journal	OSA Trends in Optics and Photonics Series
Volume	88
State	Published - 2003
Event	Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States Duration: 1 Jun 2003 → 6 Jun 2003

Cite this

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title = "Surface band bending effects in the optical gain of InGaN/GaN multiple quantum wells",

abstract = "We resolve the surface band-bending effects in the optical gain GaN/InGaN MQWs. The spectral blue shift is ascribed to the carrier transportation from the GaN cap-layer and mitigation of internal field in the InGaN well.",

author = "Peng, {L. H.} and Shih, {C. W.} and Lai, {C. M.} and Chuo, {C. C.} and Chyi, {J. I.}",

year = "2003",

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volume = "88",

pages = "359--360",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics (CLEO); Postconference Digest ; Conference date: 01-06-2003 Through 06-06-2003",

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TY - JOUR

T1 - Surface band bending effects in the optical gain of InGaN/GaN multiple quantum wells

AU - Peng, L. H.

AU - Shih, C. W.

AU - Lai, C. M.

AU - Chuo, C. C.

AU - Chyi, J. I.

PY - 2003

Y1 - 2003

N2 - We resolve the surface band-bending effects in the optical gain GaN/InGaN MQWs. The spectral blue shift is ascribed to the carrier transportation from the GaN cap-layer and mitigation of internal field in the InGaN well.

AB - We resolve the surface band-bending effects in the optical gain GaN/InGaN MQWs. The spectral blue shift is ascribed to the carrier transportation from the GaN cap-layer and mitigation of internal field in the InGaN well.

UR - http://www.scopus.com/inward/record.url?scp=8744237925&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:8744237925

SN - 1094-5695

VL - 88

SP - 359

EP - 360

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Conference on Lasers and Electro-Optics (CLEO); Postconference Digest

Y2 - 1 June 2003 through 6 June 2003

ER -

Surface band bending effects in the optical gain of InGaN/GaN multiple quantum wells

Abstract

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