Surface and bulk leakage currents in high breakdown GaN rectifiers

F. Ren, A. P. Zhang, G. T. Dang, X. A. Cao, H. Cho, S. J. Pearton, J. I. Chyi, C. M. Lee, C. C. Chuo

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


GaN Schottky diode rectifiers with contact diameters 125-1100 μm were fabricated on thick (4 μm) epi layers. At low reverse bias voltages the leakage current was proportional to contact perimeter size while at voltages approximately half the breakdown value, the reverse current was proportional to contact area. These results suggest that surface leakage dominated at low biases, while at higher biases the main contribution was from bulk leakage. The reverse leakage currents were several orders of magnitude higher than the theoretical values, while the forward turn-on voltages were approximately a factor of two higher than the theoretical value.

Original languageEnglish
Pages (from-to)619-622
Number of pages4
JournalSolid-State Electronics
Issue number4
StatePublished - 1 Apr 2000


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