Suppression of emitter size effect on the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors

S. Noor Mohammad, J. Chen, J. I. Chyi, H. Morkoç

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

The effect of emitter periphery-to-area ratio on the current-voltage characteristics of Npn AlGaAs/GaAs heterojunction bipolar transistors has been studied. It is shown that an electric field generated by a properly controlled nonuniform doping of the base region can very significantly suppress the reduction in current gain when the emitter area-to-periphery ratio is decreased, as is the case in high-speed devices. The superiority of doping-induced grading to compositional grading is discussed.

Original languageEnglish
Pages (from-to)937-939
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number10
DOIs
StatePublished - 1990

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