Suppression of emitter size effect on the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors

S. Noor Mohammad; J. Chen; J. I. Chyi; H. Morkoç

doi:10.1063/1.102631

Suppression of emitter size effect on the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors

S. Noor Mohammad, J. Chen, J. I. Chyi, H. Morkoç

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The effect of emitter periphery-to-area ratio on the current-voltage characteristics of Npn AlGaAs/GaAs heterojunction bipolar transistors has been studied. It is shown that an electric field generated by a properly controlled nonuniform doping of the base region can very significantly suppress the reduction in current gain when the emitter area-to-periphery ratio is decreased, as is the case in high-speed devices. The superiority of doping-induced grading to compositional grading is discussed.

Original language	English
Pages (from-to)	937-939
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	10
DOIs	https://doi.org/10.1063/1.102631
State	Published - 1990

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10.1063/1.102631

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abstract = "The effect of emitter periphery-to-area ratio on the current-voltage characteristics of Npn AlGaAs/GaAs heterojunction bipolar transistors has been studied. It is shown that an electric field generated by a properly controlled nonuniform doping of the base region can very significantly suppress the reduction in current gain when the emitter area-to-periphery ratio is decreased, as is the case in high-speed devices. The superiority of doping-induced grading to compositional grading is discussed.",

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AU - Mohammad, S. Noor

AU - Chen, J.

AU - Chyi, J. I.

AU - Morkoç, H.

PY - 1990

Y1 - 1990

N2 - The effect of emitter periphery-to-area ratio on the current-voltage characteristics of Npn AlGaAs/GaAs heterojunction bipolar transistors has been studied. It is shown that an electric field generated by a properly controlled nonuniform doping of the base region can very significantly suppress the reduction in current gain when the emitter area-to-periphery ratio is decreased, as is the case in high-speed devices. The superiority of doping-induced grading to compositional grading is discussed.

AB - The effect of emitter periphery-to-area ratio on the current-voltage characteristics of Npn AlGaAs/GaAs heterojunction bipolar transistors has been studied. It is shown that an electric field generated by a properly controlled nonuniform doping of the base region can very significantly suppress the reduction in current gain when the emitter area-to-periphery ratio is decreased, as is the case in high-speed devices. The superiority of doping-induced grading to compositional grading is discussed.

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DO - 10.1063/1.102631

M3 - 期刊論文

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Suppression of emitter size effect on the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors

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