Abstract
The slope efficiency and threshold current density of 1.3 μm AlGaInAs/InP lasers with AlInAs-AlGaInAs multiquantum barrier (MQB) are experimentally studied and compared with the conventional step-index separate confinement heterostructure (SCH) laser. With the MQBs at the guiding layers, the characteristic temperature can be improved as much as 10 K as compared with the conventional SCH laser. This is attributed to the suppression of electron and hole leakage currents.
Original language | English |
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Pages (from-to) | 2090-2092 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 72 |
Issue number | 17 |
DOIs | |
State | Published - 1998 |