Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge

Wei Jen Hsueh, Pei Chin Chiu, Ming Hwei Hong, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

Abstract

We have successfully mitigated the out-diffusion of Ge during molecular beam epitaxy of InGaAs on Ge by using a GaAsSb barrier layer as evidenced by secondary ion mass spectroscopy. Compared to GaAs, this GaAsSb barrier layer also results in a smoother surface morphology with its root-mean-square roughness of 0.7 nm due to the surfactant effect of Sb. Using a step-graded GaAsSb and AlGaAsSb metamorphic buffer layer, a 200-nm p-type In0.53Ga0.47As layer grown on Ge exhibits a hole mobility of 38 cm2 V−1 s−1 with a hole concentration of 2.6 × 1019 cm−3 at 300 K and 53 cm2 V−1 s−1 with a hole concentration of 1.2 × 1019 cm−3 at 77 K.

Original languageEnglish
Article number1600589
JournalPhysica Status Solidi (B) Basic Research
Volume254
Issue number2
DOIs
StatePublished - 1 Feb 2017

Keywords

  • diffusion
  • GaAsSb
  • germanium
  • InGaAs
  • molecular beam epitaxy

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