Abstract
FexGe1-x superlattices with two types of nanostructures, i.e. nanodots and nanolayers, were successfully fabricated using low-temperature molecular beam epitaxy. Transmission electron microscopy (TEM) characterization clearly shows that both the FexGe1-x nanodots and nanolayers exhibit a lattice-coherent structure with the surrounding Ge matrix without any metallic precipitations or secondary phases. The magnetic measurement reveals the nature of superparamagnetism in FexGe1-x nanodots, while showing the absence of superparamagnetism in FexGe1-x nanolayers. Magnetotransport measurements show distinct magnetoresistance (MR) behavior, i.e. a negative to positive MR transition in FexGe1-x nanodots and only positive MR in nanolayers, which could be due to a competition between the orbital MR and spin-dependent scatterings. Our results open a new growth strategy for engineering FexGe1-x nanostructures to facilitate the development of Ge-based spintronics and magnetoelectronics devices.
Original language | English |
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Article number | 505702 |
Journal | Nanotechnology |
Volume | 25 |
Issue number | 50 |
DOIs | |
State | Published - 19 Dec 2014 |
Keywords
- Electron microscopy
- FeGe superlattice
- Magnetoresistance
- Molecular beam epitaxy
- Nanodot
- Nanolay