Superlattice of FexGe1-x nanodots and nanolayers for spintronics application

Tianxiao Nie, Xufeng Kou, Jianshi Tang, Yabin Fan, Murong Lang, Li Te Chang, Chia Pu Chu, Liang He, Sheng Wei Lee, Faxian Xiu, Jin Zou, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

FexGe1-x superlattices with two types of nanostructures, i.e. nanodots and nanolayers, were successfully fabricated using low-temperature molecular beam epitaxy. Transmission electron microscopy (TEM) characterization clearly shows that both the FexGe1-x nanodots and nanolayers exhibit a lattice-coherent structure with the surrounding Ge matrix without any metallic precipitations or secondary phases. The magnetic measurement reveals the nature of superparamagnetism in FexGe1-x nanodots, while showing the absence of superparamagnetism in FexGe1-x nanolayers. Magnetotransport measurements show distinct magnetoresistance (MR) behavior, i.e. a negative to positive MR transition in FexGe1-x nanodots and only positive MR in nanolayers, which could be due to a competition between the orbital MR and spin-dependent scatterings. Our results open a new growth strategy for engineering FexGe1-x nanostructures to facilitate the development of Ge-based spintronics and magnetoelectronics devices.

Original languageEnglish
Article number505702
JournalNanotechnology
Volume25
Issue number50
DOIs
StatePublished - 19 Dec 2014

Keywords

  • Electron microscopy
  • FeGe superlattice
  • Magnetoresistance
  • Molecular beam epitaxy
  • Nanodot
  • Nanolay

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