Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

Tzu Chieh Chen, Yueh Ting Lin, Chung Yi Lin, W. C. Chen, Meei Ru Chen, Hui Ling Kao, J. I. Chyi, C. H. Hau

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Epitaxial AlN Alms were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300°C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphire-based SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.

Original languageEnglish
Article number4460882
Pages (from-to)489-493
Number of pages5
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume55
Issue number2
DOIs
StatePublished - Feb 2008

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