Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

Tzu Chieh Chen; Yueh Ting Lin; Chung Yi Lin; W. C. Chen; Meei Ru Chen; Hui Ling Kao; J. I. Chyi; C. H. Hau

doi:10.1109/TUFFC.2008.666

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

Tzu Chieh Chen, Yueh Ting Lin, Chung Yi Lin, W. C. Chen, Meei Ru Chen, Hui Ling Kao, J. I. Chyi, C. H. Hau

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Epitaxial AlN Alms were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300°C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphire-based SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.

Original language	English
Article number	4460882
Pages (from-to)	489-493
Number of pages	5
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	55
Issue number	2
DOIs	https://doi.org/10.1109/TUFFC.2008.666
State	Published - Feb 2008

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Chen, T. C., Lin, Y. T., Lin, C. Y., Chen, W. C., Chen, M. R., Kao, H. L., Chyi, J. I., & Hau, C. H. (2008). Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 55(2), 489-493. [4460882]. https://doi.org/10.1109/TUFFC.2008.666

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title = "Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors",

abstract = "Epitaxial AlN Alms were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300°C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphire-based SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.",

author = "Chen, {Tzu Chieh} and Lin, {Yueh Ting} and Lin, {Chung Yi} and Chen, {W. C.} and Chen, {Meei Ru} and Kao, {Hui Ling} and Chyi, {J. I.} and Hau, {C. H.}",

note = "Funding Information: Manuscript received May 22, 2007; accepted September 18, 2007. This work was supported by the Republic of China National Science Council under NSC 95-2221-E-033-073. T. C. Chen, Y. T. Lin, C. Y. Lin, W. C. Chen, and M. R. Chen are with Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan. H. L. Kao is with the Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan (e-mail: hlkao@cycu.edu.tw). J.-I. Chyi is with Department of Electrical Engineering, National Central University, Chung-Li 32023, Taiwan. C.-H. Hsu is with National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan. Digital Object Identifier 10.1109/TUFFC.2008.666",

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Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors. / Chen, Tzu Chieh; Lin, Yueh Ting; Lin, Chung Yi; Chen, W. C.; Chen, Meei Ru; Kao, Hui Ling; Chyi, J. I.; Hau, C. H.

In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 55, No. 2, 4460882, 02.2008, p. 489-493.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

AU - Chen, Tzu Chieh

AU - Lin, Yueh Ting

AU - Lin, Chung Yi

AU - Chen, W. C.

AU - Chen, Meei Ru

AU - Kao, Hui Ling

AU - Chyi, J. I.

AU - Hau, C. H.

N1 - Funding Information: Manuscript received May 22, 2007; accepted September 18, 2007. This work was supported by the Republic of China National Science Council under NSC 95-2221-E-033-073. T. C. Chen, Y. T. Lin, C. Y. Lin, W. C. Chen, and M. R. Chen are with Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan. H. L. Kao is with the Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan (e-mail: hlkao@cycu.edu.tw). J.-I. Chyi is with Department of Electrical Engineering, National Central University, Chung-Li 32023, Taiwan. C.-H. Hsu is with National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan. Digital Object Identifier 10.1109/TUFFC.2008.666

PY - 2008/2

Y1 - 2008/2

N2 - Epitaxial AlN Alms were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300°C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphire-based SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.

AB - Epitaxial AlN Alms were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300°C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphire-based SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.

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U2 - 10.1109/TUFFC.2008.666

DO - 10.1109/TUFFC.2008.666

M3 - 期刊論文

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AN - SCOPUS:40549103181

VL - 55

SP - 489

EP - 493

JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

SN - 0885-3010

IS - 2

M1 - 4460882

ER -

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

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