Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna

Y. T. Li; J. W. Shi; C. L. Pan; C. H. Chiu; W. S. Liu; N. W. Chen; C. K. Sun; J. I. Chyi

doi:10.1109/LPT.2007.897439

Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna

Y. T. Li, J. W. Shi, C. L. Pan, C. H. Chiu, W. S. Liu, N. W. Chen, C. K. Sun, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.

Original language	English
Pages (from-to)	840-842
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2007.897439
State	Published - 1 Jun 2007

Keywords

Low-temperature-grown GaAs (LTG-GaAs)
Photonic transmitter
Terahertz (THz)

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10.1109/LPT.2007.897439

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title = "Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna",

abstract = "We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.",

keywords = "Low-temperature-grown GaAs (LTG-GaAs), Photonic transmitter, Terahertz (THz)",

author = "Li, {Y. T.} and Shi, {J. W.} and Pan, {C. L.} and Chiu, {C. H.} and Liu, {W. S.} and Chen, {N. W.} and Sun, {C. K.} and Chyi, {J. I.}",

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AU - Li, Y. T.

AU - Shi, J. W.

AU - Pan, C. L.

AU - Chiu, C. H.

AU - Liu, W. S.

AU - Chen, N. W.

AU - Sun, C. K.

AU - Chyi, J. I.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.

AB - We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.

KW - Low-temperature-grown GaAs (LTG-GaAs)

KW - Photonic transmitter

KW - Terahertz (THz)

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VL - 19

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EP - 842

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna

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Keywords

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