Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna

Y. T. Li, J. W. Shi, C. L. Pan, C. H. Chiu, W. S. Liu, N. W. Chen, C. K. Sun, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.

Original languageEnglish
Pages (from-to)840-842
Number of pages3
JournalIEEE Photonics Technology Letters
Volume19
Issue number11
DOIs
StatePublished - 1 Jun 2007

Keywords

  • Low-temperature-grown GaAs (LTG-GaAs)
  • Photonic transmitter
  • Terahertz (THz)

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