Study on the surface polishing with large area plasma modification for 4H-SiC wafer

Chia Jen Ting; Chi Feng Chen; Chih Chiang Weng; Chun Wei Liu; Ta Hsin Chou

Study on the surface polishing with large area plasma modification for 4H-SiC wafer

Chia Jen Ting, Chi Feng Chen, Chih Chiang Weng, Chun Wei Liu, Ta Hsin Chou

Department of Mechanical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In this study, the atmospheric plasma assisted polishing technology combining the CMP process and large area atmospheric pressure plasma modification process is investigated for 4 inch 4H-SiC wafers to enhance MRR and improve surface quality. The Si-C bond of SiC material is effectively modified to Si-O bond on the surface of the SiC wafers processed by the irradition of the atmospheric plasma. Comparing with and without the plasma modification, the MRRs of C face and Si face of 4H-SiC wafer are increased about 5.7 and 6.25 times, respectively. The finished surface of the 4H-SiC wafer is near defect-free and the average surface roughness is less than 1 nm. Obviously, the atmospheric plasma assisted polishing technology with large area plasma midification process can be simultaneously obtain high MRR and fine surface quality.

Original language	English
Pages	694-698
Number of pages	5
State	Published - 2017
Event	20th International Symposium on Advances in Abrasive Technology, ISAAT 2017 - Okinawa, Japan Duration: 3 Dec 2017 → 6 Dec 2017

Conference

Conference	20th International Symposium on Advances in Abrasive Technology, ISAAT 2017
Country/Territory	Japan
City	Okinawa
Period	3/12/17 → 6/12/17

Keywords

Atmospheric pressure plasma
Plasma assisted polishing
Plasma modification process
SiC wafer polishing

Cite this

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title = "Study on the surface polishing with large area plasma modification for 4H-SiC wafer",

abstract = "In this study, the atmospheric plasma assisted polishing technology combining the CMP process and large area atmospheric pressure plasma modification process is investigated for 4 inch 4H-SiC wafers to enhance MRR and improve surface quality. The Si-C bond of SiC material is effectively modified to Si-O bond on the surface of the SiC wafers processed by the irradition of the atmospheric plasma. Comparing with and without the plasma modification, the MRRs of C face and Si face of 4H-SiC wafer are increased about 5.7 and 6.25 times, respectively. The finished surface of the 4H-SiC wafer is near defect-free and the average surface roughness is less than 1 nm. Obviously, the atmospheric plasma assisted polishing technology with large area plasma midification process can be simultaneously obtain high MRR and fine surface quality.",

keywords = "Atmospheric pressure plasma, Plasma assisted polishing, Plasma modification process, SiC wafer polishing",

author = "Ting, {Chia Jen} and Chen, {Chi Feng} and Weng, {Chih Chiang} and Liu, {Chun Wei} and Chou, {Ta Hsin}",

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pages = "694--698",

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TY - CONF

T1 - Study on the surface polishing with large area plasma modification for 4H-SiC wafer

AU - Ting, Chia Jen

AU - Chen, Chi Feng

AU - Weng, Chih Chiang

AU - Liu, Chun Wei

AU - Chou, Ta Hsin

PY - 2017

Y1 - 2017

N2 - In this study, the atmospheric plasma assisted polishing technology combining the CMP process and large area atmospheric pressure plasma modification process is investigated for 4 inch 4H-SiC wafers to enhance MRR and improve surface quality. The Si-C bond of SiC material is effectively modified to Si-O bond on the surface of the SiC wafers processed by the irradition of the atmospheric plasma. Comparing with and without the plasma modification, the MRRs of C face and Si face of 4H-SiC wafer are increased about 5.7 and 6.25 times, respectively. The finished surface of the 4H-SiC wafer is near defect-free and the average surface roughness is less than 1 nm. Obviously, the atmospheric plasma assisted polishing technology with large area plasma midification process can be simultaneously obtain high MRR and fine surface quality.

AB - In this study, the atmospheric plasma assisted polishing technology combining the CMP process and large area atmospheric pressure plasma modification process is investigated for 4 inch 4H-SiC wafers to enhance MRR and improve surface quality. The Si-C bond of SiC material is effectively modified to Si-O bond on the surface of the SiC wafers processed by the irradition of the atmospheric plasma. Comparing with and without the plasma modification, the MRRs of C face and Si face of 4H-SiC wafer are increased about 5.7 and 6.25 times, respectively. The finished surface of the 4H-SiC wafer is near defect-free and the average surface roughness is less than 1 nm. Obviously, the atmospheric plasma assisted polishing technology with large area plasma midification process can be simultaneously obtain high MRR and fine surface quality.

KW - Atmospheric pressure plasma

KW - Plasma assisted polishing

KW - Plasma modification process

KW - SiC wafer polishing

UR - http://www.scopus.com/inward/record.url?scp=85094153188&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:85094153188

SP - 694

EP - 698

T2 - 20th International Symposium on Advances in Abrasive Technology, ISAAT 2017

Y2 - 3 December 2017 through 6 December 2017

ER -

Study on the surface polishing with large area plasma modification for 4H-SiC wafer

Abstract

Conference

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