Study of drain alloy for antimony substrate vertical high voltage power metal oxide semiconductor field effect transistors

Chien Nan Liao, Feng Tso Chien, Chii Wen Chen, Yao Tsung Tsai

Research output: Contribution to journalArticlepeer-review

Abstract

An antimony (Sb)-doped substrate is used to fabricate high voltage power metal oxide semiconductor field effect transistor (MOSFET) to prevent out-doping phenomenon. Since the contact resistance of Sb-doped substrate is higher than that of the phosphorus (P) and arsenic (As)-doped substrates, which are widely used for low breakdown voltage power MOSFETs, devices that are fabricated with an Sb substrate have a higher source-drain forward voltage (VSD). The increased VSD is associated with power loss while the device is under switching in an inductive load bridge circuit. In this work, devices were baked at different temperatures for various times to reduce the VSD. The VSD was efficiently reduced at 300°C after 6h baking.

Original languageEnglish
Pages (from-to)2122-2123
Number of pages2
JournalJapanese Journal of Applied Physics
Volume47
Issue number4 PART 1
DOIs
StatePublished - 18 Apr 2008

Keywords

  • Body diode
  • Power MOSFET
  • Source-drain voltage (V)

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