Study of Diffusion Barrier for Solder/n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

Wen Chih Lin, Ying Sih Li, Albert T. Wu

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

Original languageEnglish
Pages (from-to)148-154
Number of pages7
JournalJournal of Electronic Materials
Volume47
Issue number1
DOIs
StatePublished - 1 Jan 2018

Keywords

  • BiTe
  • diffusion barrier
  • electroless Ni-P
  • interfacial reaction
  • shear strength
  • thermoelectric module

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