Study of 1/f and 1/f2 noise for InP DHBT

Kurt Cimino; Yue Ming Hsin; S. C. Shen; Milton Feng

Study of 1/f and 1/f² noise for InP DHBT

Kurt Cimino, Yue Ming Hsin, S. C. Shen, Milton Feng

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges.

Original language	English
Title of host publication	2005 International Conference on Compound Semiconductor Manufacturing Technology
State	Published - 2005
Event	2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 - New Orleans, LA, United States Duration: 11 Apr 2005 → 14 Apr 2005

Publication series

Name	2005 International Conference on Compound Semiconductor Manufacturing Technology

Conference

Conference	2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005
Country/Territory	United States
City	New Orleans, LA
Period	11/04/05 → 14/04/05

Keywords

1/f
1/f
HBT
Noise

Cite this

@inproceedings{801a9852fb9547bd94dd9a56a5ec1076,

title = "Study of 1/f and 1/f2 noise for InP DHBT",

abstract = "This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges.",

keywords = "1/f, 1/f, HBT, Noise",

author = "Kurt Cimino and Hsin, {Yue Ming} and Shen, {S. C.} and Milton Feng",

year = "2005",

language = "???core.languages.en_GB???",

isbn = "1893580067",

series = "2005 International Conference on Compound Semiconductor Manufacturing Technology",

booktitle = "2005 International Conference on Compound Semiconductor Manufacturing Technology",

note = "2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 ; Conference date: 11-04-2005 Through 14-04-2005",

}

Cimino, K, Hsin, YM, Shen, SC & Feng, M 2005, Study of 1/f and 1/f² noise for InP DHBT. in 2005 International Conference on Compound Semiconductor Manufacturing Technology. 2005 International Conference on Compound Semiconductor Manufacturing Technology, 2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005, New Orleans, LA, United States, 11/04/05.

TY - GEN

T1 - Study of 1/f and 1/f2 noise for InP DHBT

AU - Cimino, Kurt

AU - Hsin, Yue Ming

AU - Shen, S. C.

AU - Feng, Milton

PY - 2005

Y1 - 2005

N2 - This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges.

AB - This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges.

KW - 1/f

KW - HBT

KW - Noise

UR - http://www.scopus.com/inward/record.url?scp=84887340036&partnerID=8YFLogxK

M3 - 會議論文篇章

AN - SCOPUS:84887340036

SN - 1893580067

SN - 9781893580060

T3 - 2005 International Conference on Compound Semiconductor Manufacturing Technology

BT - 2005 International Conference on Compound Semiconductor Manufacturing Technology

T2 - 2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005

Y2 - 11 April 2005 through 14 April 2005

ER -