Study of 1/f and 1/f2 noise for InP DHBT

Kurt Cimino, Yue Ming Hsin, S. C. Shen, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges.

Original languageEnglish
Title of host publication2005 International Conference on Compound Semiconductor Manufacturing Technology
StatePublished - 2005
Event2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 - New Orleans, LA, United States
Duration: 11 Apr 200514 Apr 2005

Publication series

Name2005 International Conference on Compound Semiconductor Manufacturing Technology

Conference

Conference2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005
Country/TerritoryUnited States
CityNew Orleans, LA
Period11/04/0514/04/05

Keywords

  • 1/f
  • 1/f
  • HBT
  • Noise

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