Studies on reducing leakage current of large-area silicon pin microstrip sensors - methods to prevent from implantation damage

Wen Chin Tsay; Yen Ann Chen; Jyh Wong Hong; A. Chen; Willis T. Lin; Y. H. Chang; S. R. Hou; S. L. Hsu; C. R. Li; Hsien Jen Ting; Song Tsang Chiang

Studies on reducing leakage current of large-area silicon pin microstrip sensors - methods to prevent from implantation damage

Wen Chin Tsay, Yen Ann Chen, Jyh Wong Hong, A. Chen, Willis T. Lin, Y. H. Chang, S. R. Hou, S. L. Hsu, C. R. Li, Hsien Jen Ting, Song Tsang Chiang

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

Several 8×4cm² sing-sided silicon microstrip sensors with capacitors coupling and polysilicon bias resistors have been fabricated by using the planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process had been developed to replace the p⁺ strip implantation. Several anneal technology had been studied to remove the implantation damage. The proto type sensors had been tested at the CERN SPS area. Test results showed that such a sensor is feasible.

Original language	English
Pages	383-386
Number of pages	4
State	Published - 1995
Event	Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong Duration: 6 Nov 1995 → 10 Nov 1995

Conference

Conference	Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
City	Hong Kong, Hong Kong
Period	6/11/95 → 10/11/95

Cite this

Tsay, W. C., Chen, Y. A., Hong, J. W., Chen, A., Lin, W. T., Chang, Y. H., Hou, S. R., Hsu, S. L., Li, C. R., Ting, H. J., & Chiang, S. T. (1995). Studies on reducing leakage current of large-area silicon pin microstrip sensors - methods to prevent from implantation damage. 383-386. Paper presented at Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong.

@conference{ca315171f07f4867a1ef0698066a4b23,

title = "Studies on reducing leakage current of large-area silicon pin microstrip sensors - methods to prevent from implantation damage",

abstract = "Several 8×4cm2 sing-sided silicon microstrip sensors with capacitors coupling and polysilicon bias resistors have been fabricated by using the planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process had been developed to replace the p+ strip implantation. Several anneal technology had been studied to remove the implantation damage. The proto type sensors had been tested at the CERN SPS area. Test results showed that such a sensor is feasible.",

author = "Tsay, {Wen Chin} and Chen, {Yen Ann} and Hong, {Jyh Wong} and A. Chen and Lin, {Willis T.} and Chang, {Y. H.} and Hou, {S. R.} and Hsu, {S. L.} and Li, {C. R.} and Ting, {Hsien Jen} and Chiang, {Song Tsang}",

year = "1995",

language = "???core.languages.en_GB???",

pages = "383--386",

note = "Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 ; Conference date: 06-11-1995 Through 10-11-1995",

}

Tsay, WC, Chen, YA, Hong, JW, Chen, A, Lin, WT , Chang, YH, Hou, SR, Hsu, SL, Li, CR, Ting, HJ & Chiang, ST 1995, 'Studies on reducing leakage current of large-area silicon pin microstrip sensors - methods to prevent from implantation damage', Paper presented at Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, 6/11/95 - 10/11/95 pp. 383-386.

Studies on reducing leakage current of large-area silicon pin microstrip sensors - methods to prevent from implantation damage. / Tsay, Wen Chin; Chen, Yen Ann; Hong, Jyh Wong et al.
1995. 383-386 Paper presented at Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Studies on reducing leakage current of large-area silicon pin microstrip sensors - methods to prevent from implantation damage

AU - Tsay, Wen Chin

AU - Chen, Yen Ann

AU - Hong, Jyh Wong

AU - Chen, A.

AU - Lin, Willis T.

AU - Chang, Y. H.

AU - Hou, S. R.

AU - Hsu, S. L.

AU - Li, C. R.

AU - Ting, Hsien Jen

AU - Chiang, Song Tsang

PY - 1995

Y1 - 1995

N2 - Several 8×4cm2 sing-sided silicon microstrip sensors with capacitors coupling and polysilicon bias resistors have been fabricated by using the planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process had been developed to replace the p+ strip implantation. Several anneal technology had been studied to remove the implantation damage. The proto type sensors had been tested at the CERN SPS area. Test results showed that such a sensor is feasible.

AB - Several 8×4cm2 sing-sided silicon microstrip sensors with capacitors coupling and polysilicon bias resistors have been fabricated by using the planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process had been developed to replace the p+ strip implantation. Several anneal technology had been studied to remove the implantation damage. The proto type sensors had been tested at the CERN SPS area. Test results showed that such a sensor is feasible.

UR - http://www.scopus.com/inward/record.url?scp=0029487878&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0029487878

SP - 383

EP - 386

T2 - Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95

Y2 - 6 November 1995 through 10 November 1995

ER -

Studies on reducing leakage current of large-area silicon pin microstrip sensors - methods to prevent from implantation damage

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