Several 8×4cm2 sing-sided silicon microstrip sensors with capacitors coupling and polysilicon bias resistors have been fabricated by using the planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process had been developed to replace the p+ strip implantation. Several anneal technology had been studied to remove the implantation damage. The proto type sensors had been tested at the CERN SPS area. Test results showed that such a sensor is feasible.
|Number of pages
|Published - 1995
|Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
Duration: 6 Nov 1995 → 10 Nov 1995
|Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
|Hong Kong, Hong Kong
|6/11/95 → 10/11/95