Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers

Jen Wei Pan; Jen Inn Chyi; Yuan Kuang Tu; Jy Wang Liaw

doi:10.1109/ISCS.1998.711671

Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers

Jen Wei Pan, Jen Inn Chyi, Yuan Kuang Tu, Jy Wang Liaw

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The optical confinement factor, far-field angle, and threshold current of 1.3 μm AlGaInAs/InP separate confinement heterostructure (SCH) laser with two-stack AlInAs-(AlGa)InAs multiquantum barriers (MQB) are theoretically studied. The internal quantum efficiency for the laser with MQB is decreased by 13% in contrast to 24% for the laser without MQB in the temperature range of 298-348 K. The characteristic temperature can be improved by 10 K. Experimental results for the 1.3 μm AlGaInAs/InP laser with MQB are also presented and compared.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	401-404
Number of pages	4
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711671
State	Published - 1997
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: 8 Sep 1997 → 11 Sep 1997

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/Territory	United States
City	San Diego
Period	8/09/97 → 11/09/97

Access to Document

10.1109/ISCS.1998.711671

Cite this

Pan, J. W., Chyi, J. I., Tu, Y. K., & Liaw, J. W. (1997). Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 401-404). Article 711671 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711671

Pan, Jen Wei ; Chyi, Jen Inn ; Tu, Yuan Kuang et al. / Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 401-404 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

@inproceedings{81849f5c08a74ef589056afc29e5563d,

title = "Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers",

abstract = "The optical confinement factor, far-field angle, and threshold current of 1.3 μm AlGaInAs/InP separate confinement heterostructure (SCH) laser with two-stack AlInAs-(AlGa)InAs multiquantum barriers (MQB) are theoretically studied. The internal quantum efficiency for the laser with MQB is decreased by 13% in contrast to 24% for the laser without MQB in the temperature range of 298-348 K. The characteristic temperature can be improved by 10 K. Experimental results for the 1.3 μm AlGaInAs/InP laser with MQB are also presented and compared.",

author = "Pan, {Jen Wei} and Chyi, {Jen Inn} and Tu, {Yuan Kuang} and Liaw, {Jy Wang}",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",

year = "1997",

doi = "10.1109/ISCS.1998.711671",

language = "???core.languages.en_GB???",

isbn = "0780338839",

series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "401--404",

editor = "Mike Melloch and Reed, {Mark A.}",

booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

}

Pan, JW, Chyi, JI, Tu, YK & Liaw, JW 1997, Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711671, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 401-404, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 8/09/97. https://doi.org/10.1109/ISCS.1998.711671

Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers. / Pan, Jen Wei; Chyi, Jen Inn; Tu, Yuan Kuang et al.
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 401-404 711671 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers

AU - Pan, Jen Wei

AU - Chyi, Jen Inn

AU - Tu, Yuan Kuang

AU - Liaw, Jy Wang

PY - 1997

Y1 - 1997

N2 - The optical confinement factor, far-field angle, and threshold current of 1.3 μm AlGaInAs/InP separate confinement heterostructure (SCH) laser with two-stack AlInAs-(AlGa)InAs multiquantum barriers (MQB) are theoretically studied. The internal quantum efficiency for the laser with MQB is decreased by 13% in contrast to 24% for the laser without MQB in the temperature range of 298-348 K. The characteristic temperature can be improved by 10 K. Experimental results for the 1.3 μm AlGaInAs/InP laser with MQB are also presented and compared.

AB - The optical confinement factor, far-field angle, and threshold current of 1.3 μm AlGaInAs/InP separate confinement heterostructure (SCH) laser with two-stack AlInAs-(AlGa)InAs multiquantum barriers (MQB) are theoretically studied. The internal quantum efficiency for the laser with MQB is decreased by 13% in contrast to 24% for the laser without MQB in the temperature range of 298-348 K. The characteristic temperature can be improved by 10 K. Experimental results for the 1.3 μm AlGaInAs/InP laser with MQB are also presented and compared.

UR - http://www.scopus.com/inward/record.url?scp=85053123624&partnerID=8YFLogxK

U2 - 10.1109/ISCS.1998.711671

DO - 10.1109/ISCS.1998.711671

M3 - 會議論文篇章

AN - SCOPUS:85053123624

SN - 0780338839

SN - 9780780338838

T3 - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

SP - 401

EP - 404

BT - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

A2 - Melloch, Mike

A2 - Reed, Mark A.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997

Y2 - 8 September 1997 through 11 September 1997

ER -

Pan JW, Chyi JI, Tu YK, Liaw JW. Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 401-404. 711671. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). doi: 10.1109/ISCS.1998.711671

Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 μm AlGaInAs/InP quantum well lasers

Abstract

Publication series

Conference

Access to Document

Fingerprint

Cite this