Structural stability of In 2O 3 films as sensor materials

V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, M. Ivanovskaya

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A structural stability of In 2O 3 films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In 2O 3 films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In 2O 3 films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In 2O 3 films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In 2O 3 films led to improvement of their operational parameters.

Original languageEnglish
Pages (from-to)360-363
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume21
Issue number4
DOIs
StatePublished - Apr 2010

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