A structural stability of In 2O 3 films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In 2O 3 films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In 2O 3 films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In 2O 3 films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In 2O 3 films led to improvement of their operational parameters.
|Number of pages||4|
|Journal||Journal of Materials Science: Materials in Electronics|
|State||Published - Apr 2010|