Abstract
In this study, p-type Sb-doped AgInS2 thin films were prepared on indium-tin oxide (ITO) glass substrates via chemical bath deposition (CBD) process. Various Sb-doped AgInS2 thin films, with varying Sb concentration (0.2, 0.4, 0.6, and 0.8 mM) were prepared. We found the 0.6 mM Sbdoped AgInS2 film had the highest photoelectrochemical performance with photocurrent density of -1.22 mA/cm2 bias -1.5 V versus SCE reference electrode under a 300 W Xe lamp illumination with the intensity of 100 mW/cm2. This value was about 4 times higher than the 0.2 mM Sb-doped AgInS2 film. Enhanced photocurrent density was likely the result of the higher charge carrier density introduced by Sb dopant.
Original language | English |
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Pages (from-to) | 464-469 |
Number of pages | 6 |
Journal | Nanoscience and Nanotechnology Letters |
Volume | 6 |
Issue number | 6 |
DOIs | |
State | Published - 1 Jun 2014 |
Keywords
- AgInS
- Photoelectrochemistry
- Sb
- Water Splittering