Structural, optical, photoelectrochemical characteristics of p-type Sb-doped AgInS2 thin films prepared by chemical bath deposition process

Mao Chia Huang, Tsing Hai Wang, Ching Chen Wu, Wen Sheng Chang, Jing Chie Lin, Wei Hsuan Lan, Tzu Hsiang Yen

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this study, p-type Sb-doped AgInS2 thin films were prepared on indium-tin oxide (ITO) glass substrates via chemical bath deposition (CBD) process. Various Sb-doped AgInS2 thin films, with varying Sb concentration (0.2, 0.4, 0.6, and 0.8 mM) were prepared. We found the 0.6 mM Sbdoped AgInS2 film had the highest photoelectrochemical performance with photocurrent density of -1.22 mA/cm2 bias -1.5 V versus SCE reference electrode under a 300 W Xe lamp illumination with the intensity of 100 mW/cm2. This value was about 4 times higher than the 0.2 mM Sb-doped AgInS2 film. Enhanced photocurrent density was likely the result of the higher charge carrier density introduced by Sb dopant.

Original languageEnglish
Pages (from-to)464-469
Number of pages6
JournalNanoscience and Nanotechnology Letters
Volume6
Issue number6
DOIs
StatePublished - 1 Jun 2014

Keywords

  • AgInS
  • Photoelectrochemistry
  • Sb
  • Water Splittering

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