Structural and electrical investigations of a-Si:H(i) and a-Si:H(n+) stacked layers for improving the interface and passivation qualities

Yu Lin Hsieh, Chien Chieh Lee, Chia Cheng Lu, Yiin Kuen Fuh, Jenq Yang Chang, Ju Yi Lee, Tomi T. Li

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A symmetrically stacked structure [(a-Si:H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si:H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R=H2/SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

Original languageEnglish
Article number035503
JournalJournal of Photonics for Energy
Volume7
Issue number3
DOIs
StatePublished - 1 Jul 2017

Keywords

  • back surface field
  • effective carrier lifetime
  • hydrogenated amorphous silicon
  • passivation
  • radio-frequency plasma-enhanced chemical deposition
  • silicon heterojunction

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