Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

Kai Lun Chi; Xin Nan Chenl; Jye Hong Chen; J. E. Bowers; Ying Jay Yang; Jin Wei Shi

Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

Kai Lun Chi, Xin Nan Chenl, Jye Hong Chen, J. E. Bowers, Ying Jay Yang, Jin Wei Shi

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

Original language	English
Title of host publication	2016 International Semiconductor Laser Conference, ISLC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523069
State	Published - 2 Dec 2016
Event	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: 12 Sep 2016 → 15 Sep 2016

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	2016 International Semiconductor Laser Conference, ISLC 2016
Country/Territory	Japan
City	Kobe
Period	12/09/16 → 15/09/16

Cite this

Chi, K. L., Chenl, X. N., Chen, J. H., Bowers, J. E., Yang, Y. J., & Shi, J. W. (2016). Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. In 2016 International Semiconductor Laser Conference, ISLC 2016 Article 7765750 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc..

Chi, Kai Lun ; Chenl, Xin Nan ; Chen, Jye Hong et al. / Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Conference Digest - IEEE International Semiconductor Laser Conference).

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title = "Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs",

abstract = "By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.",

author = "Chi, {Kai Lun} and Chenl, {Xin Nan} and Chen, {Jye Hong} and Bowers, {J. E.} and Yang, {Ying Jay} and Shi, {Jin Wei}",

note = "Publisher Copyright: {\textcopyright} 2016 IEICE-ES.; 2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",

year = "2016",

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series = "Conference Digest - IEEE International Semiconductor Laser Conference",

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Chi, KL, Chenl, XN, Chen, JH, Bowers, JE, Yang, YJ & Shi, JW 2016, Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765750, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 12/09/16.

Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. / Chi, Kai Lun; Chenl, Xin Nan; Chen, Jye Hong et al.
2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765750 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

AU - Chi, Kai Lun

AU - Chenl, Xin Nan

AU - Chen, Jye Hong

AU - Bowers, J. E.

AU - Yang, Ying Jay

AU - Shi, Jin Wei

PY - 2016/12/2

Y1 - 2016/12/2

N2 - By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

AB - By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

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M3 - 會議論文篇章

AN - SCOPUS:85014166890

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

Chi KL, Chenl XN, Chen JH, Bowers JE, Yang YJ, Shi JW. Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. In 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7765750. (Conference Digest - IEEE International Semiconductor Laser Conference).

Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

Abstract

Publication series

Conference

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