Stress relaxation in GaN by transfer bonding on Si substrates

S. C. Hsu, B. J. Pong, W. H. Li, Thomas E. Beechem, Samuel Graham, C. Y. Liu

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Abstract

The stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 μm, the high compressive stress state in GaN layer was relieved. A 10 μm Au bonding layer thickness is shown to possess the maximum compressive stress relief and also the deformation potential of the quantum well was found to be ∼85 meV. A nonlinear parabolic relation between luminescent bandgap and the biaxial stress of the transferred GaN epilayer in the compressive region was observed.

Original languageEnglish
Article number251114
JournalApplied Physics Letters
Volume91
Issue number25
DOIs
StatePublished - 2007

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