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Stress analysis of transferred thin-GaN LED by Au-Si wafer bonding
S. C. Hsu,
C. Y. Liu
Department of Chemical and Materials Engineering
Optical Sciences Center
Research output
:
Contribution to journal
›
Conference article
›
peer-review
3
Scopus citations
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Keyphrases
Sapphire Substrate
100%
GaN-based LED
100%
High Power
100%
Epilayer
100%
Stress Analysis
100%
Wafer Bonding
100%
Si Wafer
100%
AuSi
100%
Light Use Efficiency
66%
GaN Layers
66%
Light Bulbs
33%
Thermal Conductivity
33%
Light Source
33%
Assure
33%
Halogen Light
33%
KrF Excimer Laser
33%
Heat Dissipation
33%
Lighting Applications
33%
Raman Spectra
33%
Thermal Conduction
33%
Laser Lift-off
33%
Heavy Doped
33%
LED Module
33%
GaN Wafer
33%
Heat Dissipation Capability
33%
Bonding Layer
33%
Vertical LED
33%
Bonding Lift-off
33%
Quality Changes
33%
Incandescent Light
33%
Engineering
Sapphire Substrate
100%
Wafer Bonding
100%
Si Wafer
100%
Heat Losses
66%
Lightbulb
33%
Light Source
33%
Excimer Laser
33%
Bonding Layer
33%
Poor Thermal Conductivity
33%
Raman Spectra
33%
Material Science
Sapphire
100%
Stress Analysis
100%
Thermal Conductivity
33%