Stress analysis for a substrate holder module and thin films grown in an MOCVD reactor

Keyphrases

• Silicon Wafer 100%
• Stress Analysis 100%
• Substrate Holder 100%
• MOCVD Reactor 100%
• Sapphire Wafer 83%
• Rotational Speed 50%
• Residual Stress 50%
• Temperature Gradient 33%
• GaN Films 33%
• Loading Rate 33%
• Wafer Bow 33%
• Thermal Load 33%
• Epitaxial 16%
• Finite Element Analysis 16%
• Wafer 16%
• Loading Conditions 16%
• GaN Thin Film 16%
• Heat Source 16%
• Temperature Uniformity 16%
• Critical Stress 16%
• Structural Integrity 16%
• In Films 16%
• Reactor Temperature 16%
• Susceptor 16%
• Film-substrate System 16%

Engineering

• Thin Films 100%
• Silicon Wafer 100%
• Residual Stress 60%
• Rotation Speed 40%
• Load Speed 40%
• Temperature Gradients 40%
• Thermal Gradient 40%
• Thermal Load 40%
• Simulation Result 20%
• Rotational Speed 20%
• Tensiles 20%
• Loading Condition 20%
• Critical Stress 20%
• Structural Integrity 20%
• Susceptor 20%
• Reactor Temperature 20%
• Finite Element Analysis 20%
• Actuator 20%
• Heat Sources 20%

Material Science

• Silicon Wafer 100%
• Thin Films 100%
• Sapphire 100%
• Stress Analysis 100%
• Film 80%
• Residual Stress 60%
• Thermal Load 40%
• Silicon 20%
• Finite Element Method 20%