Contact and interconnect are two major issues in ULSI metallization. TiSi2 is currently the most commonly used silicide in IC industry. CoSi2 has been introduced to replace TiSi2 in sub-quarter micron technology. However, its use in sub-0.1 micron devices is in doubt unless raised source/drain scheme becomes feasible. NiSi is the only silicide left with comparable resistivity with TiSi2 and CoSi2. On the other hand, ingenious scheme may be found to utilize metal layer as contacts as illustrated for several refractory metal/Si systems. For interconnects, technology for Cu interconnect is being heavily invested and Cu chips are implemented. Au and Ag interconnects are being explored. In this paper, recent progresses in developing UHV-CVD selective epitaxial Si as raised source/drain, NiSi and refractory metals as contact, Au and Ag as interconnects will be reviewed. Their viability for device applications will be discussed.