Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth

W. Y. Woon, S. H. Wang, Y. T. Chuang, M. C. Chuang, C. L. Chen

Research output: Contribution to journalArticlepeer-review

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Abstract

We investigate the solid phase epitaxial regrowth (SPER) dynamics of phosphorus doped Si:C by time resolved reflectivity and high resolution x-ray diffraction. The effect of SPER kinetics on strain profile and dopant activation is analyzed. The accumulated tensile strain induced by both C and P during SPER synergistically determines the onset of SPER rate retardation and leads to lower strain and electrical conductance near surface. Physical origin for the observed SPER rate evolution is discussed and explained with a strain included solute trapping model. Possibility of tailoring strain and doping profiles is discussed.

Original languageEnglish
Article number141906
JournalApplied Physics Letters
Volume97
Issue number14
DOIs
StatePublished - 4 Oct 2010

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