Strain controlled orbital state and magnetization in insulating LaMnO3+δ films

A. M. Zhang, S. L. Cheng, J. G. Lin, X. S. Wu

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Abstract

LaMnO3+δ films with various thicknesses were grown on LaAlO3 (001) single crystal substrate to investigate the effect of in-plane compressive strain (∼-0.57%) on magnetic properties. All films exhibit a blocking temperature Tb at which the zero field cooled magnetization reaches a maximum, indicating the ferromagnetic (FM) nanoclusters are embedded in the background of antiferromagnetic (AFM) matrix. The onset temperature of FM transition Tc and Tb is increased by 24% and 89%, respectively, with the thickness decreasing from 82.4 nm to 9.2 nm. Simultaneously, the saturation magnetization greatly increases by 309%, which is ascribed to the strain-induced transition of AFM to FM phase due to the orbital order structure switching from x2- 1/y2-1 [A-type] to (x2- y2) + (z2- 1) [F-type].

Original languageEnglish
Article number17B325
JournalJournal of Applied Physics
Volume117
Issue number17
DOIs
StatePublished - 7 May 2015

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