Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission

A. V. Subashiev; L. G. Gerchikov; Y. A. Mamaev; Y. P. Yashin; J. S. Roberts; D. A. Luh; T. Maruyama; J. E. Clendenin

doi:10.1063/1.1920416

Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission

A. V. Subashiev, L. G. Gerchikov, Y. A. Mamaev, Y. P. Yashin, J. S. Roberts, D. A. Luh, T. Maruyama, J. E. Clendenin

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Spin-polarized electron emission from superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is accomplished using an InAlGaAsGaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 μm thick working layer are excellent results for a strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.

Original language	English
Article number	171911
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	17
DOIs	https://doi.org/10.1063/1.1920416
State	Published - 25 Apr 2005

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title = "Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission",

abstract = "Spin-polarized electron emission from superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is accomplished using an InAlGaAsGaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 μm thick working layer are excellent results for a strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.",

author = "Subashiev, {A. V.} and Gerchikov, {L. G.} and Mamaev, {Y. A.} and Yashin, {Y. P.} and Roberts, {J. S.} and Luh, {D. A.} and T. Maruyama and Clendenin, {J. E.}",

note = "Funding Information: This work was supported by CRDF under Grant No. RP1-2345-ST-02, by NATO under Grant No. PST.CLG 979966, by Russian Ministry of Industry, Science, and Technology under Contract Nos. 40.012.1.1.1152 and 40.072.1.1.1175, by UK EPSRC support for the National Centre for III-V Technologies at the University of Sheffield under Grant No. GR∕R65534∕01, and also supported in part by the U.S. Department of Energy under Contract No. DE-AC02-76SF00515.",

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doi = "10.1063/1.1920416",

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volume = "86",

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TY - JOUR

T1 - Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission

AU - Subashiev, A. V.

AU - Gerchikov, L. G.

AU - Mamaev, Y. A.

AU - Yashin, Y. P.

AU - Roberts, J. S.

AU - Luh, D. A.

AU - Maruyama, T.

AU - Clendenin, J. E.

N1 - Funding Information: This work was supported by CRDF under Grant No. RP1-2345-ST-02, by NATO under Grant No. PST.CLG 979966, by Russian Ministry of Industry, Science, and Technology under Contract Nos. 40.012.1.1.1152 and 40.072.1.1.1175, by UK EPSRC support for the National Centre for III-V Technologies at the University of Sheffield under Grant No. GR∕R65534∕01, and also supported in part by the U.S. Department of Energy under Contract No. DE-AC02-76SF00515.

PY - 2005/4/25

Y1 - 2005/4/25

N2 - Spin-polarized electron emission from superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is accomplished using an InAlGaAsGaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 μm thick working layer are excellent results for a strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.

AB - Spin-polarized electron emission from superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is accomplished using an InAlGaAsGaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 μm thick working layer are excellent results for a strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.

UR - http://www.scopus.com/inward/record.url?scp=20844447871&partnerID=8YFLogxK

U2 - 10.1063/1.1920416

DO - 10.1063/1.1920416

M3 - 期刊論文

AN - SCOPUS:20844447871

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 171911

ER -

Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission

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