Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission

A. V. Subashiev, L. G. Gerchikov, Y. A. Mamaev, Y. P. Yashin, J. S. Roberts, D. A. Luh, T. Maruyama, J. E. Clendenin

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Spin-polarized electron emission from superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is accomplished using an InAlGaAsGaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 μm thick working layer are excellent results for a strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.

Original languageEnglish
Article number171911
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number17
DOIs
StatePublished - 25 Apr 2005

Fingerprint

Dive into the research topics of 'Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission'. Together they form a unique fingerprint.

Cite this