Stoichiometric Effect of Sb2Te3 Thin Film on Thermoelectric Property

Zhen Wei Sun, Kai Wen Cheng, Si Wei Lin, V. K. Ranganayakulu, Yang Yuan Chen, Shang Jui Chiu, Tai Wei Lee, Albert T. Wu

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Properly selecting electrode materials for antimony telluride (Sb2Te3) thermoelectric (TE) thin film enhances the power factor. This study analyzed the compositional variation and measured the TE properties of pristine antimony telluride (Sb2Te3), Ni/Sb2Te3/Ni, and Cu/Sb2Te3/Cu thin films that were aged to simulate real applications. The rapid diffusion of Cu in the Cu/Sb2Te3/Cu film resulted in the massive growth of the CuTe intermetallic compound (IMC), which led to Te deficiency. Te deficiency causes the formation of antisite SbTeand reduces the power factor. Antisite TeSbincreases the power factor because the growth of Sb2O3on the pristine Sb2Te3and Ni/Sb2Te3/Ni films, in which almost no Ni diffusion occurs, results in Sb deficiency. The formation of oxides and IMCs alters the stoichiometry of the films. The formation of the NiTe reaction layer at the interface becomes a self-barrier that inhibits Ni diffusion to the Sb2Te3film. Herein, a defect reaction is proposed to explain the effects of such changes on the TE properties and the relationship between the stoichiometry of the films and the concentrations of the antisites.

Original languageEnglish
Pages (from-to)7026-7033
Number of pages8
JournalACS Applied Energy Materials
Issue number6
StatePublished - 27 Jun 2022


  • SbTe
  • Seebeck coefficient
  • defect reaction
  • interfacial reaction
  • power factor
  • stoichiometric effect


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