Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

Chii Chang Chen; Hui Wen Chuang; Gou Chung Chi; Chang Cheng Chuo; Jen Inn Chyi

doi:10.1063/1.1332403

Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

Chii Chang Chen, Hui Wen Chuang, Gou Chung Chi, Chang Cheng Chuo, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

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Abstract

High-indium-content InGaN/GaN multiple-quantum-well structures grown by low-pressure metalorganic chemical-vapor deposition have been studied by photoluminescence and optical pumping at room temperature and 25 K. The results show that the annealing process reduces the compositional fluctuation of indium content owing to diffusion and can make the quantum-well structures more identical everywhere in the active region. Several stimulated-emission peaks were observed in the spectra of optical pumping in edge-emitting geometry. These peaks result from interband transitions between quantized levels in the quantum well. By solving the time-independent Schrödinger equation, the interband transitions in the quantum well corresponding to each stimulated-emission peak in optical-pumping spectra can be identified. The band offset parameter ΔΕ_C/ΔΕ_g = 0.38 was obtained.

Original language	English
Pages (from-to)	3758-3760
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	23
DOIs	https://doi.org/10.1063/1.1332403
State	Published - 4 Dec 2000

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title = "Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures",

abstract = "High-indium-content InGaN/GaN multiple-quantum-well structures grown by low-pressure metalorganic chemical-vapor deposition have been studied by photoluminescence and optical pumping at room temperature and 25 K. The results show that the annealing process reduces the compositional fluctuation of indium content owing to diffusion and can make the quantum-well structures more identical everywhere in the active region. Several stimulated-emission peaks were observed in the spectra of optical pumping in edge-emitting geometry. These peaks result from interband transitions between quantized levels in the quantum well. By solving the time-independent Schr{\"o}dinger equation, the interband transitions in the quantum well corresponding to each stimulated-emission peak in optical-pumping spectra can be identified. The band offset parameter ΔΕC/ΔΕg = 0.38 was obtained.",

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T1 - Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

AU - Chen, Chii Chang

AU - Chuang, Hui Wen

AU - Chi, Gou Chung

AU - Chuo, Chang Cheng

AU - Chyi, Jen Inn

PY - 2000/12/4

Y1 - 2000/12/4

N2 - High-indium-content InGaN/GaN multiple-quantum-well structures grown by low-pressure metalorganic chemical-vapor deposition have been studied by photoluminescence and optical pumping at room temperature and 25 K. The results show that the annealing process reduces the compositional fluctuation of indium content owing to diffusion and can make the quantum-well structures more identical everywhere in the active region. Several stimulated-emission peaks were observed in the spectra of optical pumping in edge-emitting geometry. These peaks result from interband transitions between quantized levels in the quantum well. By solving the time-independent Schrödinger equation, the interband transitions in the quantum well corresponding to each stimulated-emission peak in optical-pumping spectra can be identified. The band offset parameter ΔΕC/ΔΕg = 0.38 was obtained.

AB - High-indium-content InGaN/GaN multiple-quantum-well structures grown by low-pressure metalorganic chemical-vapor deposition have been studied by photoluminescence and optical pumping at room temperature and 25 K. The results show that the annealing process reduces the compositional fluctuation of indium content owing to diffusion and can make the quantum-well structures more identical everywhere in the active region. Several stimulated-emission peaks were observed in the spectra of optical pumping in edge-emitting geometry. These peaks result from interband transitions between quantized levels in the quantum well. By solving the time-independent Schrödinger equation, the interband transitions in the quantum well corresponding to each stimulated-emission peak in optical-pumping spectra can be identified. The band offset parameter ΔΕC/ΔΕg = 0.38 was obtained.

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Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

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