Statistical Cross-Linking at the Si(111)/SiO2 interface

D. A. Luh, T. Miller, Lee Chiang

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Angle-resolved photoemission measurements of the Si 2p core level as a function of polar emission angle were carried out to investigate the atomic populations and depth distributions of Si in various oxidation states for a SiO2 film thermally grown on Si(111). The suboxide states including Si1+, Si2+, and Si3+ exhibit different depth distributions. Despite these differences, the results are consistent with a chemically abrupt interface. A simple model based on the statistical cross-linking of dangling bonds between a bulk-truncated Si and an amorphous SiO2 layer explains our observations.

Original languageEnglish
Pages (from-to)3014-3017
Number of pages4
JournalPhysical Review Letters
Issue number16
StatePublished - 1997


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