We demonstrate Organic thin film transistors (OTFTs) with solution-processed semiconductor, triethylsilylethynyl anthradithiophene (TES-ADT), as the active layer materials are investigated. Bottom-gate solution-processed TES-ADT OTFTs possess excellent performance with mobility of 0.05 cm2V-1s-1, current modulation of 4×10 6, sub-threshold slope of 0.91 V/dec. and threshold voltage of-7.7 V on glass substrate. The reliability of device is evaluated and demonstrates good electrical performance uniformity and stability after bias stress. Particularly, the devices exhibit reversible degradation after vacuum annealing, shown it's environmental stability under air atmosphere. Moreover, the device integrability has been demonstrated with two transistors-one capacitor (2T1C) array for display media driving such as organic light emitting diode (OLED).
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 2008|
|Event||2008 SID International Symposium - Los Angeles, CA, United States|
Duration: 20 May 2008 → 21 May 2008