Stability and integrability evaluation of organic thin film transistor with solution processable semiconductor

Chien Hsien Yu; Tan Fu Lei; Jing Yi Yan; Jin Long Liao; Liang Hsiang Chen; Yen Ying Lee; Mei Ru Lin; Yu Yuan Shen; Tzu Wei Lee; Tsung Hsien Lin; Ko Pin Liao; Shu Tung Yeh; Kung You Cheng; Jia Chong Ho; Ming Chou Chen

doi:10.1889/1.3069363

Stability and integrability evaluation of organic thin film transistor with solution processable semiconductor

Chien Hsien Yu, Tan Fu Lei, Jing Yi Yan, Jin Long Liao, Liang Hsiang Chen, Yen Ying Lee, Mei Ru Lin, Yu Yuan Shen, Tzu Wei Lee, Tsung Hsien Lin, Ko Pin Liao, Shu Tung Yeh, Kung You Cheng, Jia Chong Ho, Ming Chou Chen

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate Organic thin film transistors (OTFTs) with solution-processed semiconductor, triethylsilylethynyl anthradithiophene (TES-ADT), as the active layer materials are investigated. Bottom-gate solution-processed TES-ADT OTFTs possess excellent performance with mobility of 0.05 cm2V^-1s^-1, current modulation of 4×10 ⁶, sub-threshold slope of 0.91 V/dec. and threshold voltage of-7.7 V on glass substrate. The reliability of device is evaluated and demonstrates good electrical performance uniformity and stability after bias stress. Particularly, the devices exhibit reversible degradation after vacuum annealing, shown it's environmental stability under air atmosphere. Moreover, the device integrability has been demonstrated with two transistors-one capacitor (2T1C) array for display media driving such as organic light emitting diode (OLED).

Original language	English
Pages (from-to)	1247-1249
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	1
DOIs	https://doi.org/10.1889/1.3069363
State	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 20 May 2008 → 21 May 2008

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Yu, C. H., Lei, T. F., Yan, J. Y., Liao, J. L., Chen, L. H., Lee, Y. Y., Lin, M. R., Shen, Y. Y., Lee, T. W., Lin, T. H., Liao, K. P., Yeh, S. T., Cheng, K. Y., Ho, J. C., & Chen, M. C. (2008). Stability and integrability evaluation of organic thin film transistor with solution processable semiconductor. Digest of Technical Papers - SID International Symposium, 39(1), 1247-1249. https://doi.org/10.1889/1.3069363

@article{60ca808db2544076b2731ac66dd0d29d,

title = "Stability and integrability evaluation of organic thin film transistor with solution processable semiconductor",

abstract = "We demonstrate Organic thin film transistors (OTFTs) with solution-processed semiconductor, triethylsilylethynyl anthradithiophene (TES-ADT), as the active layer materials are investigated. Bottom-gate solution-processed TES-ADT OTFTs possess excellent performance with mobility of 0.05 cm2V-1s-1, current modulation of 4×10 6, sub-threshold slope of 0.91 V/dec. and threshold voltage of-7.7 V on glass substrate. The reliability of device is evaluated and demonstrates good electrical performance uniformity and stability after bias stress. Particularly, the devices exhibit reversible degradation after vacuum annealing, shown it's environmental stability under air atmosphere. Moreover, the device integrability has been demonstrated with two transistors-one capacitor (2T1C) array for display media driving such as organic light emitting diode (OLED).",

author = "Yu, {Chien Hsien} and Lei, {Tan Fu} and Yan, {Jing Yi} and Liao, {Jin Long} and Chen, {Liang Hsiang} and Lee, {Yen Ying} and Lin, {Mei Ru} and Shen, {Yu Yuan} and Lee, {Tzu Wei} and Lin, {Tsung Hsien} and Liao, {Ko Pin} and Yeh, {Shu Tung} and Cheng, {Kung You} and Ho, {Jia Chong} and Chen, {Ming Chou}",

year = "2008",

doi = "10.1889/1.3069363",

language = "???core.languages.en_GB???",

volume = "39",

pages = "1247--1249",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

note = "2008 SID International Symposium ; Conference date: 20-05-2008 Through 21-05-2008",

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Yu, CH, Lei, TF, Yan, JY, Liao, JL, Chen, LH, Lee, YY, Lin, MR, Shen, YY, Lee, TW, Lin, TH, Liao, KP, Yeh, ST, Cheng, KY, Ho, JC & Chen, MC 2008, 'Stability and integrability evaluation of organic thin film transistor with solution processable semiconductor', Digest of Technical Papers - SID International Symposium, vol. 39, no. 1, pp. 1247-1249. https://doi.org/10.1889/1.3069363

TY - JOUR

T1 - Stability and integrability evaluation of organic thin film transistor with solution processable semiconductor

AU - Yu, Chien Hsien

AU - Lei, Tan Fu

AU - Yan, Jing Yi

AU - Liao, Jin Long

AU - Chen, Liang Hsiang

AU - Lee, Yen Ying

AU - Lin, Mei Ru

AU - Shen, Yu Yuan

AU - Lee, Tzu Wei

AU - Lin, Tsung Hsien

AU - Liao, Ko Pin

AU - Yeh, Shu Tung

AU - Cheng, Kung You

AU - Ho, Jia Chong

AU - Chen, Ming Chou

PY - 2008

Y1 - 2008

N2 - We demonstrate Organic thin film transistors (OTFTs) with solution-processed semiconductor, triethylsilylethynyl anthradithiophene (TES-ADT), as the active layer materials are investigated. Bottom-gate solution-processed TES-ADT OTFTs possess excellent performance with mobility of 0.05 cm2V-1s-1, current modulation of 4×10 6, sub-threshold slope of 0.91 V/dec. and threshold voltage of-7.7 V on glass substrate. The reliability of device is evaluated and demonstrates good electrical performance uniformity and stability after bias stress. Particularly, the devices exhibit reversible degradation after vacuum annealing, shown it's environmental stability under air atmosphere. Moreover, the device integrability has been demonstrated with two transistors-one capacitor (2T1C) array for display media driving such as organic light emitting diode (OLED).

AB - We demonstrate Organic thin film transistors (OTFTs) with solution-processed semiconductor, triethylsilylethynyl anthradithiophene (TES-ADT), as the active layer materials are investigated. Bottom-gate solution-processed TES-ADT OTFTs possess excellent performance with mobility of 0.05 cm2V-1s-1, current modulation of 4×10 6, sub-threshold slope of 0.91 V/dec. and threshold voltage of-7.7 V on glass substrate. The reliability of device is evaluated and demonstrates good electrical performance uniformity and stability after bias stress. Particularly, the devices exhibit reversible degradation after vacuum annealing, shown it's environmental stability under air atmosphere. Moreover, the device integrability has been demonstrated with two transistors-one capacitor (2T1C) array for display media driving such as organic light emitting diode (OLED).

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U2 - 10.1889/1.3069363

DO - 10.1889/1.3069363

M3 - 會議論文

AN - SCOPUS:54549121361

SN - 0097-966X

VL - 39

SP - 1247

EP - 1249

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Stability and integrability evaluation of organic thin film transistor with solution processable semiconductor

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