Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells

L. H. Peng, K. T. Hsu, C. W. Shih, C. C. Chuo, J. I. Chyi

Research output: Contribution to conferencePaperpeer-review

Abstract

The effects of spontaneous polarization on the optical properties of strained InGaN/GaN quantum wells (QW) were investigated. The reduced radiative recombination efficiency and large spectral red shifting were studied on the high excitation luminescence spectra of these quantum wells. It was shown that the additive effects of the spontaneous polarization and piezoelectric polarization induced electric field at these interface leads to substantial decrease in the interband optical transition energy and emission intensity in these QWs.

Original languageEnglish
PagesII36-II37
StatePublished - 2001
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: 15 Jul 200119 Jul 2001

Conference

Conference4th Pacific Rim Conference on Lasers and Electro-Optics
Country/TerritoryJapan
CityChiba
Period15/07/0119/07/01

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