Spatial distribution of electrical properties in GaN p-i-n rectifiers

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, C. C. Chuo

Research output: Contribution to journalArticlepeer-review

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Abstract

Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported for prototype p-i-n structures developed for high-power applications. It is observed that the diffusion length values in such devices are of the order of 0.5-0.8 μm and show considerable variations along the p-n junction plane as also is the case for the thickness of the space charge region near the p-i interface. Unidentified defects manifesting themselves even at low applied reverse biases and giving rise to a strong bright contrast in EBIC images of the cleaved diodes have been also detected. Their surface density has been estimated to be not lower than 103 cm-2.

Original languageEnglish
Pages (from-to)1591-1595
Number of pages5
JournalSolid-State Electronics
Volume44
Issue number9
DOIs
StatePublished - 1 Sep 2000

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