Solution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled

Keyphrases

• Solution Process 100%
• Nonvolatile Resistive Memory 100%
• Black Phosphorus Nanoflakes 100%
• Polystyrene 60%
• Active Layer 60%
• Black Phosphorus 60%
• Memory Device 60%
• Resistive Random Access Memory (ReRAM) 40%
• Aluminum Oxide Layer 40%
• High Resistance State 40%
• Aluminum Electrode 20%
• Performance Improvement 20%
• Conductance 20%
• Space Charge Limited Current 20%
• Non-volatile 20%
• Hybrid Structure 20%
• Device Performance 20%
• Complementary Metal Oxide Semiconductor 20%
• Switching Behavior 20%
• Ohmic 20%
• Conductive Mechanism 20%
• High Electric Field 20%
• Conductive Filament 20%
• Memory Performance 20%
• Transport Mechanism 20%
• Low-voltage Operation 20%
• Transfer Curves 20%
• Freeform 20%
• Device Operation 20%
• Carrier Transport Model 20%
• Improved Device 20%
• Long Retention Time 20%
• Liquid-phase Exfoliation 20%
• Low Resistance State 20%
• Exfoliation Process 20%
• Trap Site 20%
• Detrapping 20%
• Compatible Process 20%
• Emission Model 20%
• Poole-Frenkel Emission 20%

Material Science

• Polystyrene 100%
• Resistive Random-Access Memory 100%
• Aluminum Oxide 66%
• Aluminum 33%
• Carrier Transport 33%
• Complementary Metal-Oxide-Semiconductor Device 33%