Site-controlled InGaAs quantum dots grown on a GaAs multi-faceted microstructure for single photon emissions

Hsiang Szu Chang; Chieh Ming Hsu; Ming Hui Yang; Tung Po Hsieh; Jen Inn Chyi; Tzu Min Hsu

doi:10.1002/pssc.200779169

Site-controlled InGaAs quantum dots grown on a GaAs multi-faceted microstructure for single photon emissions

Hsiang Szu Chang, Chieh Ming Hsu, Ming Hui Yang, Tung Po Hsieh, Jen Inn Chyi, Tzu Min Hsu

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

This study demonstrates the single photon emissions form site-controlled InGaAs quantum dots (QDs) grown on an apex plane of a GaAs multifaceted structure by pattern-growth techniques, multifaceted structure comprises the top (001) plane, and {111} and {011} side wall facets. The QDs formed on the apex plane rather than the side wall facet because the growth rate of apex plane is exceeded that of side wall facet. Microphotoluminescence (μPL), μPL excitation (μPLE) and theoretical calculations are adopted to estimate the growth rate of the {111} ({011}) facets as ∼82% (∼69%) lower than that of the (001) plane. Since the (001) plane growth rate is higher than that of the side wall facets, the QDs can be carefully controlled. This method is effective in the fabrication of a single photon source.

Original language	English
Pages (from-to)	2713-2715
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200779169
State	Published - 2008
Event	34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 15 Oct 2007 → 18 Oct 2007

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title = "Site-controlled InGaAs quantum dots grown on a GaAs multi-faceted microstructure for single photon emissions",

abstract = "This study demonstrates the single photon emissions form site-controlled InGaAs quantum dots (QDs) grown on an apex plane of a GaAs multifaceted structure by pattern-growth techniques, multifaceted structure comprises the top (001) plane, and {111} and {011} side wall facets. The QDs formed on the apex plane rather than the side wall facet because the growth rate of apex plane is exceeded that of side wall facet. Microphotoluminescence (μPL), μPL excitation (μPLE) and theoretical calculations are adopted to estimate the growth rate of the {111} ({011}) facets as ∼82% (∼69%) lower than that of the (001) plane. Since the (001) plane growth rate is higher than that of the side wall facets, the QDs can be carefully controlled. This method is effective in the fabrication of a single photon source.",

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AU - Chang, Hsiang Szu

AU - Hsu, Chieh Ming

AU - Yang, Ming Hui

AU - Hsieh, Tung Po

AU - Chyi, Jen Inn

AU - Hsu, Tzu Min

PY - 2008

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N2 - This study demonstrates the single photon emissions form site-controlled InGaAs quantum dots (QDs) grown on an apex plane of a GaAs multifaceted structure by pattern-growth techniques, multifaceted structure comprises the top (001) plane, and {111} and {011} side wall facets. The QDs formed on the apex plane rather than the side wall facet because the growth rate of apex plane is exceeded that of side wall facet. Microphotoluminescence (μPL), μPL excitation (μPLE) and theoretical calculations are adopted to estimate the growth rate of the {111} ({011}) facets as ∼82% (∼69%) lower than that of the (001) plane. Since the (001) plane growth rate is higher than that of the side wall facets, the QDs can be carefully controlled. This method is effective in the fabrication of a single photon source.

AB - This study demonstrates the single photon emissions form site-controlled InGaAs quantum dots (QDs) grown on an apex plane of a GaAs multifaceted structure by pattern-growth techniques, multifaceted structure comprises the top (001) plane, and {111} and {011} side wall facets. The QDs formed on the apex plane rather than the side wall facet because the growth rate of apex plane is exceeded that of side wall facet. Microphotoluminescence (μPL), μPL excitation (μPLE) and theoretical calculations are adopted to estimate the growth rate of the {111} ({011}) facets as ∼82% (∼69%) lower than that of the (001) plane. Since the (001) plane growth rate is higher than that of the side wall facets, the QDs can be carefully controlled. This method is effective in the fabrication of a single photon source.

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U2 - 10.1002/pssc.200779169

DO - 10.1002/pssc.200779169

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EP - 2715

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

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T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007

Y2 - 15 October 2007 through 18 October 2007

ER -

Site-controlled InGaAs quantum dots grown on a GaAs multi-faceted microstructure for single photon emissions

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