Si1−xGex photodiode with segregated Ge nanocrystals

Yao Tsung Ouyang; Hsien Chien Hsieh; Po Chen Lin; Tsan Hsien Tseng; Ching Shun Ku; Hsin Yi Lee; Albert T. Wu

doi:10.1016/j.matlet.2016.08.054

Si_1−xGe_x photodiode with segregated Ge nanocrystals

Yao Tsung Ouyang
, Hsien Chien Hsieh
, Po Chen Lin
, Tsan Hsien Tseng
, Ching Shun Ku
, Hsin Yi Lee
, Albert T. Wu

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si_1−xGe_x thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si_1−xGe_x films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si_1−xGe_x photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.

Original language	English
Pages (from-to)	308-311
Number of pages	4
Journal	Materials Letters
Volume	184
DOIs	https://doi.org/10.1016/j.matlet.2016.08.054
State	Published - 1 Dec 2016

Keywords

Electronic materials
Ge segregation
Nanocrystal
Optical materials and properties

Access to Document

10.1016/j.matlet.2016.08.054

Application of Electroless Cobalt Diffusion Barrier on Telluride-Based Low- and Middle- Temperature Range Thermoelectric Module(2/3)
Wu, T.-C. (PI)
1/08/16 → 31/07/17
Project: Research

Cite this

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title = "Si1−xGex photodiode with segregated Ge nanocrystals",

abstract = "P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1−xGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1−xGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1−xGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.",

keywords = "Electronic materials, Ge segregation, Nanocrystal, Optical materials and properties",

author = "Ouyang, \{Yao Tsung\} and Hsieh, \{Hsien Chien\} and Lin, \{Po Chen\} and Tseng, \{Tsan Hsien\} and Ku, \{Ching Shun\} and Lee, \{Hsin Yi\} and Wu, \{Albert T.\}",

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doi = "10.1016/j.matlet.2016.08.054",

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TY - JOUR

T1 - Si1−xGex photodiode with segregated Ge nanocrystals

AU - Ouyang, Yao Tsung

AU - Hsieh, Hsien Chien

AU - Lin, Po Chen

AU - Tseng, Tsan Hsien

AU - Ku, Ching Shun

AU - Lee, Hsin Yi

AU - Wu, Albert T.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1−xGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1−xGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1−xGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.

AB - P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1−xGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1−xGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1−xGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.

KW - Electronic materials

KW - Ge segregation

KW - Nanocrystal

KW - Optical materials and properties

UR - https://www.scopus.com/pages/publications/84989958481

U2 - 10.1016/j.matlet.2016.08.054

DO - 10.1016/j.matlet.2016.08.054

M3 - 期刊論文

AN - SCOPUS:84989958481

SN - 0167-577X

VL - 184

SP - 308

EP - 311

JO - Materials Letters

JF - Materials Letters

ER -

Si1−xGex photodiode with segregated Ge nanocrystals

Abstract

Keywords

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Projects

Application of Electroless Cobalt Diffusion Barrier on Telluride-Based Low- and Middle- Temperature Range Thermoelectric Module(2/3)

Cite this

Si_1−xGe_x photodiode with segregated Ge nanocrystals