Si1−xGex photodiode with segregated Ge nanocrystals

Yao Tsung Ouyang; Hsien Chien Hsieh; Po Chen Lin; Tsan Hsien Tseng; Ching Shun Ku; Hsin Yi Lee; Albert T. Wu

doi:10.1016/j.matlet.2016.08.054

Si_1−xGe_x photodiode with segregated Ge nanocrystals

Yao Tsung Ouyang, Hsien Chien Hsieh, Po Chen Lin, Tsan Hsien Tseng, Ching Shun Ku, Hsin Yi Lee, Albert T. Wu

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si_1−xGe_x thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si_1−xGe_x films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si_1−xGe_x photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.

Original language	English
Pages (from-to)	308-311
Number of pages	4
Journal	Materials Letters
Volume	184
DOIs	https://doi.org/10.1016/j.matlet.2016.08.054
State	Published - 1 Dec 2016

Keywords

Electronic materials
Ge segregation
Nanocrystal
Optical materials and properties

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10.1016/j.matlet.2016.08.054

Application of Electroless Cobalt Diffusion Barrier on Telluride-Based Low- and Middle- Temperature Range Thermoelectric Module(2/3)
Wu, T.-C. (PI)
1/08/16 → 31/07/17
Project: Research

Cite this

@article{cb4a3c6d870c4d87a0cdd68462fd5090,

title = "Si1−xGex photodiode with segregated Ge nanocrystals",

abstract = "P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1−xGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1−xGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1−xGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.",

keywords = "Electronic materials, Ge segregation, Nanocrystal, Optical materials and properties",

author = "Ouyang, {Yao Tsung} and Hsieh, {Hsien Chien} and Lin, {Po Chen} and Tseng, {Tsan Hsien} and Ku, {Ching Shun} and Lee, {Hsin Yi} and Wu, {Albert T.}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = dec,

day = "1",

doi = "10.1016/j.matlet.2016.08.054",

language = "???core.languages.en_GB???",

volume = "184",

pages = "308--311",

journal = "Materials Letters",

issn = "0167-577X",

}

TY - JOUR

T1 - Si1−xGex photodiode with segregated Ge nanocrystals

AU - Ouyang, Yao Tsung

AU - Hsieh, Hsien Chien

AU - Lin, Po Chen

AU - Tseng, Tsan Hsien

AU - Ku, Ching Shun

AU - Lee, Hsin Yi

AU - Wu, Albert T.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1−xGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1−xGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1−xGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.

AB - P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1−xGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1−xGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1−xGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.

KW - Electronic materials

KW - Ge segregation

KW - Nanocrystal

KW - Optical materials and properties

UR - http://www.scopus.com/inward/record.url?scp=84989958481&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2016.08.054

DO - 10.1016/j.matlet.2016.08.054

M3 - 期刊論文

AN - SCOPUS:84989958481

SN - 0167-577X

VL - 184

SP - 308

EP - 311

JO - Materials Letters

JF - Materials Letters

ER -

Si1−xGex photodiode with segregated Ge nanocrystals

Abstract

Keywords

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Projects

Application of Electroless Cobalt Diffusion Barrier on Telluride-Based Low- and Middle- Temperature Range Thermoelectric Module(2/3)

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Si_1−xGe_x photodiode with segregated Ge nanocrystals