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P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1−xGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1−xGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1−xGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.
- Electronic materials
- Ge segregation
- Optical materials and properties
FingerprintDive into the research topics of 'Si<sub>1−x</sub>Ge<sub>x</sub> photodiode with segregated Ge nanocrystals'. Together they form a unique fingerprint.
- 1 Finished
Application of Electroless Cobalt Diffusion Barrier on Telluride-Based Low- and Middle- Temperature Range Thermoelectric Module(2/3)
1/08/16 → 31/07/17