Si/SiGe-based photodiode on a standard silicon substrate for 10-Gbit/s short-reach fiber communication at 830nm wavelength

Y. S. Wu, J. W. Shi, Z. L. Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report a Si/SiGe-based vertical-illuminated photodiode at 830nm wavelength. Wide 3-dB bandwidth (>10GHz), high responsivity (1.38A/W), and high output current (2.35mA) under avalanche operation can be achieved simultaneously without using silicon-on-insulator (SOI) substrate.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2007
PublisherOptical Society of America
ISBN (Print)1557528349, 9781557528346
StatePublished - 2007
EventConference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States
Duration: 6 May 20076 May 2007

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2007
Country/TerritoryUnited States
CityBaltimore, MD
Period6/05/076/05/07

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