@inproceedings{0182f053b9494efaa45f512018ccf44c,
title = "Si/SiGe-based photodiode on a standard silicon substrate for 10-Gbit/s short-reach fiber communication at 830nm wavelength",
abstract = "We report a Si/SiGe-based vertical-illuminated photodiode at 830nm wavelength. Wide 3-dB bandwidth (>10GHz), high responsivity (1.38A/W), and high output current (2.35mA) under avalanche operation can be achieved simultaneously without using silicon-on-insulator (SOI) substrate.",
author = "Wu, {Y. S.} and Shi, {J. W.} and Li, {Z. L.}",
year = "2007",
doi = "10.1109/CLEO.2007.4452666",
language = "???core.languages.en_GB???",
isbn = "9781557528346",
series = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",
booktitle = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",
note = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007 ; Conference date: 06-05-2007 Through 11-05-2007",
}