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Single crystal rare earth oxides epitaxially grown on GaN
M. Hong
, A. R. Kortan
, J. Kwo
, J. P. Mannaerts
, C. M. Lee
,
J. I. Chyi
Department of Electrical Engineering
Research output
:
Contribution to conference
›
Paper
›
peer-review
12
Scopus citations
Overview
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Keyphrases
Oxide Film
100%
Single Crystal
100%
Rare Earth Oxides
100%
Epitaxy
100%
Epitaxially Grown
100%
High Temperature
50%
In Situ
50%
Single Crystal X-ray Diffraction (SCXRD)
50%
Lattice Constant
50%
Ultra-high Vacuum
50%
GaN Substrate
50%
Yttrium Oxide
50%
Structural Quality
50%
Gd2O3
50%
Reflection High-energy Electron Diffraction
50%
Six-fold Symmetry
50%
Hexagonal Phase
50%
Sesquioxides
50%
Diffraction Measurements
50%
Material Science
Oxide Compound
100%
Single Crystal
100%
Oxide Film
66%
Epitaxy
66%
Diffraction Measurement
33%
Lattice Constant
33%
Reflection High-Energy Electron Diffraction
33%
Engineering
Oxide Film
100%
Silicon Dioxide
100%
Ray Diffraction
50%
Energy Electron Diffraction
50%
Lattice Constant
50%
Physics
Single Crystal
100%
Epitaxy
66%
Oxide Film
66%
High Energy Electron
33%
Ultrahigh Vacuum
33%
Electron Diffraction
33%