Single crystal rare earth oxides epitaxially grown on GaN

M. Hong; A. R. Kortan; J. Kwo; J. P. Mannaerts; C. M. Lee; J. I. Chyi

Single crystal rare earth oxides epitaxially grown on GaN

M. Hong
, A. R. Kortan
, J. Kwo
, J. P. Mannaerts
, C. M. Lee
, J. I. Chyi

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

12 Scopus citations

Abstract

New single cyrstals of Gd₂O₃ and Y₂O₃ were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.

Original language	English
Pages	495-500
Number of pages	6
State	Published - 2000
Event	27th International Symposium on Compound Semiconductors - Monterey, CA, United States Duration: 2 Oct 2000 → 5 Oct 2000

Conference

Conference	27th International Symposium on Compound Semiconductors
Country/Territory	United States
City	Monterey, CA
Period	2/10/00 → 5/10/00

Cite this

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title = "Single crystal rare earth oxides epitaxially grown on GaN",

abstract = "New single cyrstals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.",

author = "M. Hong and Kortan, \{A. R.\} and J. Kwo and Mannaerts, \{J. P.\} and Lee, \{C. M.\} and Chyi, \{J. I.\}",

year = "2000",

language = "???core.languages.en\_GB???",

pages = "495--500",

note = "27th International Symposium on Compound Semiconductors ; Conference date: 02-10-2000 Through 05-10-2000",

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TY - CONF

T1 - Single crystal rare earth oxides epitaxially grown on GaN

AU - Hong, M.

AU - Kortan, A. R.

AU - Kwo, J.

AU - Mannaerts, J. P.

AU - Lee, C. M.

AU - Chyi, J. I.

PY - 2000

Y1 - 2000

N2 - New single cyrstals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.

AB - New single cyrstals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.

UR - https://www.scopus.com/pages/publications/0034424888

M3 - 會議論文

AN - SCOPUS:0034424888

SP - 495

EP - 500

T2 - 27th International Symposium on Compound Semiconductors

Y2 - 2 October 2000 through 5 October 2000

ER -

Single crystal rare earth oxides epitaxially grown on GaN

Abstract

Conference

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