New single cyrstals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.
|Number of pages||6|
|State||Published - 2000|
|Event||27th International Symposium on Compound Semiconductors - Monterey, CA, United States|
Duration: 2 Oct 2000 → 5 Oct 2000
|Conference||27th International Symposium on Compound Semiconductors|
|Period||2/10/00 → 5/10/00|