Single crystal rare earth oxides epitaxially grown on GaN

M. Hong; A. R. Kortan; J. Kwo; J. P. Mannaerts; C. M. Lee; J. I. Chyi

Single crystal rare earth oxides epitaxially grown on GaN

M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, C. M. Lee, J. I. Chyi

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

12 Scopus citations

Abstract

New single cyrstals of Gd₂O₃ and Y₂O₃ were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.

Original language	English
Pages	495-500
Number of pages	6
State	Published - 2000
Event	27th International Symposium on Compound Semiconductors - Monterey, CA, United States Duration: 2 Oct 2000 → 5 Oct 2000

Conference

Conference	27th International Symposium on Compound Semiconductors
Country/Territory	United States
City	Monterey, CA
Period	2/10/00 → 5/10/00

Cite this

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title = "Single crystal rare earth oxides epitaxially grown on GaN",

abstract = "New single cyrstals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.",

author = "M. Hong and Kortan, {A. R.} and J. Kwo and Mannaerts, {J. P.} and Lee, {C. M.} and Chyi, {J. I.}",

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pages = "495--500",

note = "27th International Symposium on Compound Semiconductors ; Conference date: 02-10-2000 Through 05-10-2000",

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TY - CONF

T1 - Single crystal rare earth oxides epitaxially grown on GaN

AU - Hong, M.

AU - Kortan, A. R.

AU - Kwo, J.

AU - Mannaerts, J. P.

AU - Lee, C. M.

AU - Chyi, J. I.

PY - 2000

Y1 - 2000

N2 - New single cyrstals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.

AB - New single cyrstals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant, the fully relaxed oxide films are of excellent structural quality.

UR - http://www.scopus.com/inward/record.url?scp=0034424888&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0034424888

SP - 495

EP - 500

T2 - 27th International Symposium on Compound Semiconductors

Y2 - 2 October 2000 through 5 October 2000

ER -

Single crystal rare earth oxides epitaxially grown on GaN

Abstract

Conference

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